Fairchild Semiconductor Corporation

Ohio University

Faradox Energy Storage, Inc.

Martin E Kordesch

Richard L Woodin

Howard D Bartlow

Keith D Jamison

Eric Stinaff

Sudiksha Khadka

Hugh Richardson

Methods and materials for growing TMD materials on substrates and making semiconductor devices are described. Metal contacts may be created prior to conducting a deposition process such as chemical vapor deposition (CVD) to grow a TMD material, such that the metal contacts serve as the seed/catalyst for TMD material growth. A method of making a semiconductor device may include conducting a lift-off lithography process on a substrate to produce a substrate having metal contacts deposited thereon in lithographically defined areas, and then growing a TMD material on the substrate by a deposition process to make a semiconductor device. Further described are semiconductor devices having a substrate with metal contacts deposited thereon in lithographically defined areas, and a TMD material on the substrate, where the TMD material is a continuous, substantially uniform monolayer film between and on the metal contacts, where the metal contacts are chemically bonded to the TMD material.

Directed growth of electrically self-contacted monolayer transition metal dichalcogenides with lithographically defined metallic patterns

Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the, same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.

Flexible films or sheets for forming high-breakdown strength, high-temperature capacitors are disclosed. Amorphous metal oxides and nitrides, preferably SiOor HfO, with a dielectric constant (k) greater than 2 and stacks of oxides and nitrides formed over conducting substrates may be formed. The dielectrics may be formed by reactive sputter deposition of the amorphous materials onto cooled substrates. The cooled substrate allows the films to be amorphous or nanocrystalline and results in films that can be flexed and that can be rolled into cylindrical shapes. An important application for these dielectrics is in high energy-density wound capacitors.

Flexible dielectric film and method for making

A variety of optimal luminescent emitter layers, luminescent devices, and methods of fabricating the same are provided. In accordance with one embodiment of the present invention, an alternating current thin film electroluminescent device is provided including an AC power source and an emitter layer positioned between a pair of electrode layers. One of the pair of electrode layers is transparent to visible light of a selected wavelength. The AC power source is connected across the pair of electrode layers. The emitter layer comprises a non-conductive amorphous alloy comprising aluminum nitride and an Er luminescent center. The emitter layer and the pair of electrode layers are arranged such that, upon activation of the AC power source, an electric field is created between the electrode layers across the emitter layer. The aluminum nitride and the Er luminescent center are provided in proportions selected such that the electric field causes emission of visible light of the selected wavelength from the emitter layer.

Growing community of inventors

The Plains, OH, United States of America

Martin E Kordesch