Aixtron Ag

Aixtron Se

Aixtron, Inc.

Martin Dauelsberg

Gerhard Karl Strauch

Johannes Käppeler

Johannes Kaeppeler

Gerd Strauch

Baskar Pagadala Gopi

Michael Long

Markus Gersdorff

Johannes Lindner

Marcus Schumacher

Thomas Krücken

Hugo Silva

Piotr Strzyzewski

Holger Juergensen

Bernd Schulte

Fred Crawley

Martin Conor

Michael Bremser

Nico Jouault

Victor Saywell

Conor Martin

A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Temperature-controlled gas supply line with dilution gas flows supplied at multiple locations

A gas distributor for a CVD reactor includes two separate gas distribution chambers, into each of which a process gas can be fed through an infeed opening. Each of the gas distribution chambers is formed, in part, by a gas distribution device disposed in a top layer being in each case flow-connected to connecting channels disposed in a bottom layer. The connecting channels associated with different gas distribution chambers lie alternately adjacent to one another and have gas outlet openings for the process gases to escape. Each of the at least two gas distribution devices has a distribution section, which in each case is flow-connected to a plurality of sub-distribution sections. The connecting channels are flow-connected to at least one of the sub-distribution sections. The sub-distribution sections of different gas distribution chambers lie alternately adjacent to one another and are separated from one another by a dividing wall.

Gas distributor for a CVD reactor

A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.

Gas inlet member of a CVD reactor

The invention relates to an apparatus for the deposition of one or more layers on a substrate (), which comprises a process chamber () which is arranged in a reactor housing () and has a heatable bottom () on which the substrate rests and a lid () extending parallel to the bottom () and also a gas inlet facility () for introduction of process gases. The distance (H) between the process chamber lid () and the process chamber bottom () can be reduced to virtually zero. A cooling apparatus () by means of which the process chamber lid () is cooled in the process position during deposition of the layers is provided above the process chamber lid (), with the distance between the cooling apparatus () and the process chamber lid () increasing as the distance (H) between the process chamber lid () and the process chamber bottom () is reduced.

CVD reactor having a process-chamber ceiling which can be lowered

The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (), extending in a vertical direction, of a gas inlet member (), fixed in place with respect to a reactor housing, into a process chamber (), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (), protruding into the center of the rotationally symmetrical process chamber (), and flows in a radially outward direction via a base (') of the process chamber (), extending in a horizontal direction and rotating about the center, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (&#x2032;) of the gas inlet member () protrudes into a pot-like recess () and an end portion (&#x2032;) of a gas deflecting face () is flush with the base (&#x2032;).

CVD reactor comprising a gas inlet member

The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.

Inlet system for an MOCVD reactor

The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated susceptor. The first process gas flows through a central line with a central outlet opening and the second process gas flows through a line which is peripheral thereto and which has a peripheral outlet opening that is formed by a gas-permeable gas outlet ring. Said gas outlet ring surrounds a ring-shaped pre-chamber. The invention provides that in order to avoid a parasitic deposition in the area of the peripheral outlet opening, the end section of the gas outlet ring that faces towards the susceptor or the radially outer section of the surface of the gas outlet mechanism surrounding the central outlet opening is cooled by the second process gas according to a truncated cone or revolution hyperboloid shape of a gas guiding surface formed by the pre-chamber back wall.

Gas-admission element for CVD processes, and device

The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor. The flow parameters are selected in such a way that the second reaction gas is essentially only pyrolytically decomposed in the inlet area and the products of decomposition diffuse crosswise to the direction of Dow of the gases to a substrate located on the process chamber floor, in a deposition area which is located downstream of the input area. Upon reaching said substrate, said products of decomposition condense to form a layer, together with products of decomposition of the first reaction layer. The invention aims to ensure that the decomposition of the organometallic products of decomposition takes place essentially only in the inlet area, even in the case of longer deposition areas, and to ensure that the partial pressures of the products of decomposition (depletion) in the gas phase above the deposition area maintain an essentially linear course. To this end, the invention provides that the kinematic viscosity of the carrier gas that is added to the second reaction gas is adjusted, especially by mixing two gases which differconsiderably in terms of their kinematic viscosity, in such a way that the quotient of Reynolds numbers in the two gas outlet areas is approximately one for essentially approximately identical average gas speeds.

Method for depositing in particular crystalline layers, and device for carrying out the method

The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled wall. The floor of said process chamber is heated. At least one reaction gas as a process gas, and hydrogen as a carrier gas, are centrally introduced into the process chamber, and are extracted by a gas evacuation ring surrounding the process chamber. A flush gas flows between the cover of the reactor and the cover of the process chamber. Said flush gas and the flush gas which flushes the area between the reactor wall and the gas evacuation ring are introduced into the outer region of the process chamber, via a gap between the cover of the reactor and the gas evacuation ring which can be lowered for loading the process chamber, in order to be sucked through the openings in the gas evacuation ring with the process gas. The gas which flushes the region between the reactor wall and the gas evacuation ring is nitrogen or a mixture of hydrogen and nitrogen.

Method for depositing in particular crystalline layers

The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

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Aachen, Germany

Martin Dauelsberg