Infineon Technologies Ag

Martin Commons

Paul Wensley

Tobias Mono

Mohammed Fazil Fayaz

Veit Klee

John Pohl

Velt Klee

A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top surface of wordlines adjacent the active regions during the selective silicidation process. A single nitride insulating layer is used, and portions of the workpiece are covered with photoresist during the formation of the silicide material.

Selective silicidation scheme for memory devices

A method of providing shallow trench ( ) isolation for a semiconductor wafer ( ). Trenches ( ) are formed within a first semiconductor material ( ) and a pad nitride ( ), leaving a portion of first semiconductor material ( ) and pad nitride ( ) in a region between the trenches ( ). A second semiconductor material ( ) is deposited over the trenches ( ) to fill the trenches ( ) to a height below the first semiconductor material ( ) top surface. A first insulator ( ) is selectively formed over the second semiconductor material ( ). The pad nitride ( ) and a portion of the first semiconductor material ( ) between the trenches ( ) are removed to isolate element regions of the wafer ( ) and form straps ( ) having a low resistance.

Strap resistance using selective oxidation to cap DT poly before STI etch

Method of measuring combined critical dimension and overlay in single step

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Stormville, NY, United States of America

Martin Commons