International Rectifier Corporation

Infineon Technologies Americas Corp.

Martin Carroll

David Paul Jones

Andrew Neil Sawle

Martin Standing

Matthew P Elwin

Ian Glenville Wagstaffe

Mark Pavier

Ling Ma

Timothy Donald Henson

Hugo R Burke

Daniel Cutler

Susan Johns

Danish Khatri

A silver-containing solderable contact on a semiconductor die has its outer edge spaced from the confronting edge of an epoxy passivation layer so that, after soldering, silver ions are not present and are not therefor free to migrate under the epoxy layer to form dendrites.

Method for forming a reliable solderable contact

Solderable contact and passivation for semiconductor dies

According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.

Trench MOSFET and method for fabricating same

Solderable top metalization and passivation for source mounted package

A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Autoclave capable chip-scale package

A semiconductor device includes a die with at least one electrode on a surface thereof, at least one solderable contact formed on the electrode, and a passivation layer formed over the electrode and including an opening that exposes the solderable contact. The passivation layer opening may be wider than the solderable contact such that a gap extends between the contact and the passivation layer. The device also includes a barrier layer disposed on the top surface of the electrode, and along the underside of the solderable contact and across the gap. The barrier layer may also extend under the passivation layer and may cover the entire top surface of the electrode. The barrier layer may also extend along the sidewalls of the electrode. The barrier layer may include a titanium layer or a titanium layer and nickel layer. The barrier layer protects the electrode and underlying die from acidic fluxes found in lead-free solders.

Protective barrier layer for semiconductor device electrodes

Growing community of inventors

Canton, United Kingdom

Martin Carroll