USA As Represented by Secretary of the Navy

University System of Maryland

Other

Government of the United States of America, As Represented by the Secretary of Commerce

Geo-centers, Inc.

National Security Agency

Geo-center, Inc.

Flexel, LLC

Martin C Peckerar

Christie R Marrian

Jeffrey M Calvert

Jacque H Georger, Jr

Yves T Ngu

Mario Dagenais

Milton L Rebbert

Joel M Schnur

Elizabeth Ann Dobisz

Charles R Eddy, Jr

Paul E Schoen

F Keith Perkins

Eric S Snow

Mark E Twigg

Birendra Dutt

Zeynep Dilli

Richard L Henry

Daniel D Koleske

Ronald T Holm

Alma E Wickenden

Kee W Rhee

James J Hickman

John D Barry

Michael D Messina, Jr

Keir C Lauritzen

Frank K Perkins

Richard A Allen

Michael W Cresswell

Daniel J McCarthy

Pehr E Pehrsson

Neil Goldsman

Loren W Linholm

Leonard M Tender

Stephanie Fertig

Amitabh Varshney

David Joseph Nagel

Joseph Yahalom

Yang Zhang

George M Metze

Nelson S Saks

Daniel A Lowy

Christie R K Marrian

Kelly W Foster

William Chu

John Kosakowski

John F Bass

Julius Grossman

Charles J Taylor

Howard A Smith

Jacqueline Fischer

Xuetong Sun

Mahsa Dornajafi

Po-Chun Huang

Robert Benjamin Proctor

Angela M Hodge-Miller

Systems, methods, apparatuses, and computer program products for displaying an image. A method may include generating an image from a tuned light pattern directly through a nanophotonics phased-array chip. The method may also include applying a proximity effect on the image. The method may further include adjusting an image quality of the image by performing proximity effect correction on the image with the proximity effect. In addition, the method may include controlling a phase of an optical signal emanating from the nanophotonics phased-array chip. Further, the method may include projecting the adjusted image based on the controlled phase of the optical signal.

Nanophotonics phased-array system for virtual and augmented reality multifocal displays

Systems for batteries or galvanic cells are disclosed. The system comprises a mixing chamber. The system further comprises a first reservoir, in fluid communication with a mixing chamber, the first reservoir configured to store a concentrated electrolyte. Additionally the system comprises a pump configured to pump a fluid into the mixing chamber. The system further comprises an electrochemical energy cell in fluid communication with the mixing chamber wherein the mixing chamber is configured to receive the fluid and concentrated electrolyte and mix the fluid and the concentrated electrolyte to produce a diluted electrolyte. Finally the system comprises the electrochemical energy cell configured to receive the diluted electrolyte, use the received diluted electrolyte for an electrochemical reaction and remove the used electrolyte solution from the cell.

Zinc-water battery and system

A thin, rechargeable, flexible electrochemical energy cell includes a battery cell, or a capacitor cell, or a battery/capacitor hybrid cell that can be stackable in any number and order. The cell can be based on a powdery mixture of hydrated ruthenium oxide particles or nanoparticles with activated carbon particles or nanoparticles suspended in an electrolyte. The electrolyte may contain ethylene glycol, boric acid, citric acid, ammonium hydroxide, organic acids, phosphoric acid, and/or sulphuric acid. An anode electrode may be formed with a thin layer of oxidizable metal (Zn, Al, or Pb). The cathode may be formed with a graphite backing foil. The energy cell may have a voltage at or below 1.25V for recharging. The thickness 15 of the cell structure can be in the range of 0.5 mm-1 mm, or lower.

Thin flexible rechargeable electrochemical energy cell and method of fabrication

A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam 'writing'. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

Photolithographic mask exhibiting enhanced light transmission due to utilizing sub-wavelength aperture arrays for imaging patterns in nano-lithography

A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

Stepper system for ultra-high resolution photolithography using photolithographic mask exhibiting enhanced light transmission due to utilizing sub-wavelength aperture arrays

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

An analog to digital converter includes a resistor-divider network including a plurality of resistors, an arbel channel circuit configured to generate a voltage sawtooth signal as an output, a dc-offset disposed to couple a node of the resistor-divider network and the arbel-channel circuit. The converter further includes a voltage reference circuit configured to generate a reference voltage, and a differential comparator configured to compare the voltage sawtooth signal with the reference voltage to produce a digital output signal corresponding to the voltage sawtooth signal. Method of converting an analog signal to a digital signal is also described.

Analog to digital converter using sawtooth voltage signals with differential comparator

An analog to digital converter circuit includes an isolation circuit, an input circuit including a resistor chain, a plurality of fixed threshold comparators, and an encoder. The resistor chain includes a plurality of resistors connected in series, the isolation circuit being configured to isolate a device supplying the analog input signal from the input circuit. The isolation circuit is connected to the input circuit at a top node of the resistor chain, and wherein 2values of the analog input voltage are connected to inputs of the fixed threshold comparators to produce corresponding output signals. Methods of converting an analog signal to a digital signal are also described.

Analog-to-digital converter

Molecular recognition-based electronic sensor, which is gateless, depletion mode field effect transistor consisting of source and drain diffusions, a depletion-mode implant, and insulating layer chemically modified by immobilized molecular receptors that enables miniaturized label-free molecular detection amenable to high-density array formats. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The conductivity of the active channel is determined by the potential of the sample solution in which the device is immersed and the device-solution interfacial capacitance. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The interfacial capacitance is determined by the extent of occupancy of the immobilized receptor molecules by target molecules. Target molecules can be either charged or uncharged. Change in interfacial capacitance upon target molecule binding results in modulation of an externally supplied current through the channel.

Microelectronic device and method for label-free detection and quantification of biological and chemical molecules

A fiducial beam monitor includes a patterned diode layer on a semiconducting substrate. An electrical field between the diode (or diodes) on the diode layer and the semiconducting substrate modulates the size of the depletion layer formed by the diode or diode. A high energy beam incident upon a diode on the diode layer produces a greater current than a high energy beam incident upon a non-diodic region of the same layer. In use, the beam monitor is typically fixed to the backside of a workpiece such as a semitransparent membrane being patterned by a focused high energy beam that is translated with respect to workpiece and attached monitor. The changes in current during translation are then correlated with the position of the beam with respect to the pattern on the diode layer.

Fiducial beam position monitor

Methods for and products of modification and metallization of oxidizable surfaces, including diamond surfaces, by plasma oxidation

Improvement in resolution in terms of minimum feature sizes and proximity fects in an electronic mask is attained by making the mask using a high voltage electron beam which deflects or blocks backscattered electrons. The novel mask structure comprises a transparent support, an absorber layer disposed on said support, a dielectric layer disposed on said absorber layer, and a resist layer disposed on said dielectric layer. It is the dielectric layer which is credited for improving resolution in said mask which can be used a multiple number of times in printing a pattern for various applications, including electronic devices and integrated circuits.

Lithographic mask and method for fabrication thereof

A method and apparatus for bonding a layer of coating material onto a subate with minimal bulk heating of the substrate. A pulsed electron beam generator is used to produce high energy electrons at the beginning of the pulse and a larger number of lower energy electrons at the end of the pulse. A thin sacrificial or ablative layer of an easily-vaporized material such as tin is placed on top the coating. The high energy electrons penetrate through the ablative and coating layers. The ablative layer is heated to a molten state, causing it to vaporize. The ablation process generates a force on the coating layer which drives it into the substrate.

Bright beam method for super-resolution in e-beam lithography

High aspect ratio metal microstructures may be prepared by a method involving

High aspect ratio metal microstructures and method for preparing the same

Growing community of inventors

Silver Spring, MD, United States of America

Martin C Peckerar