Siemens Aktiengesellschaft

Osram Gmbh

Infineon Technologies Ag

Osram Opto Semiconductors Gmbh

Evonik Degussa Gmbh

Martin Brandt

Martin Stutzmann

Michael Kelly

Oliver Ambacher

Roman Dimitrov

Robert Handschuh

Andre Rainer Stegner

Martin Trocha

Hartmut Wiggers

Andreas Haertl

André Ebbers

Robert Lechner

Günther Vogg

A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.

Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5&#xb7;10S&#xb7;cmto 10 S&#xb7;cm, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that

Porous semiconductive film and process for its production

A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

Electronic components produced by a method of separating two layers of material from one another

Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced epitaxially on substrates comprising crystalline germanium, and can be used to construct light-emitting optoelectronic components such as light-emitting diodes or lasers.

Semiconductor polymers, method for the production thereof and an optoelectronic component

A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

Method for transferring a semiconductor body from a growth substrate to a support material

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

Method of producing a light-emitting diode

Method of separating two layers of material from one another

Method of separating two layers of material from one another and electronic components produced using this process

Growing community of inventors

Garching, Germany

Martin Brandt