Carl-zeiss-smt Ag

Carl-zeiss-stiftung

Carl Zeiss Smt Gmbh

Carl Zeiss Semiconductor Manufacturing Technologies Ag

Asml Netherlands B.v.

Asml Lithography B.v.

Carl Zeiss Semiconductor

Leybold Gmbh

Martin Antoni

Wolfgang Singer

Johannes Wangler

Udo Dinger

Wilhelm Ulrich

Karl-Heinz Schuster

Hans-Juergen Mann

Jörg Schultz

Frank Melzer

Joerg Schultz

Wilhelm Egle

Joachim Hainz

Joachim Wietzorrek

Bernhard Gellrich

Bernhard Geuppert

Markus Weiss

Andreas Seifert

Vadim Yevgenyevich Banine

Nils Dieckmann

Erich Schubert

Isabel Escudero-Sanz

Erik Roelof Loopstra

Axel Scholz

Michel Aliman

J&ouml;rg Schultz

Hin Yiu Anthony Chung

Gennady Fedosenko

Karl Heinz Schuster

Alexander Laue

Leonid Gorkhover

Marcel Dierichs

Ruediger Reuter

Philipp Bosselmann

Dirk Rothweiler

Roel Moors

Andreas Gorus

Bernd Warm

Valerie Derpmann

Karl-Hein Schuster

Ulrich Drodofsky

Hans-Joachim Miesner

Theodore Lundquist

Rüdiger Reuter

A method for examining a gas by mass spectrometry includes: ionizing the gas for producing ions; and storing, exciting and detecting at least some of the produced ions in an FT ion trap. Producing and storing the ions in the FT ion trap and/or exciting the ions prior to the detection of the ions in the FT ion trap includes at least one selective IFT excitation, such as a SWIFT excitation, which is dependent on the mass-to-charge ratio of the ions. The disclosure further relates to a mass spectrometer. A mass spectrometer includes: an FT ion trap; and an excitation device for storing, exciting, and detecting ions in the FT ion trap.

Method for examining a gas by mass spectrometry and mass spectrometer

There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength&#x2266;193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Illumination system particularly for microlithography

There is provided an illumination system for microlithography with wavelengths &#x2266;193 nm. The illumination system includes a primary light source, a first optical component, a second optical component, an image plane, and an exit pupil. The first optical component transforms the primary light source into a plurality of secondary light sources that are imaged by the second optical component in the exit pupil. The first optical component includes a first optical element having a plurality of first raster elements that are imaged into the image plane, producing a plurality of images being superimposed at least partially on a field in the image plane. The second optical component comprises a first optical system that includes at least a third field mirror with positive optical power and a second optical system that includes at least a second field mirror with positive optical power. The first optical system images the plurality of secondary light sources in a plane between the first optical system and the second optical system, forming a plurality of tertiary light sources, and the second optical system images the plurality of tertiary light sources in the exit pupil.

A focusing-device for the radiation from a light source () is provided with a collector mirror (') which is arranged in a mount () and collects the light, in virtual or real terms, from the light source () at the second focus (). The collector mirror (&#x2032;) is displaceably connected to the mount () via a bearing in such a way that its optical properties remain at least approximately the same even in the event of temperature changes.

Focusing-device for the radiation from a light source

There is provided an illumination system for microlithography with wavelengths&#x2266;193 nm that includes a primary light source, a first optical component, a second optical component, an image plane, and an exit pupil. The first optical component transforms the primary light source into a plurality of secondary light sources that are imaged by the second optical component in the exit pupil. The first optical element and the second optical element are reflective. The first optical component includes a first optical element having a plurality of first raster elements that are imaged into the image plane, producing a plurality of images being superimposed, at least partially, on a field in the image plane. The first optical component includes a collector unit and a second optical element having a plurality of second raster elements. The illumination system also includes a first optical axis between the collector unit and the first optical element, a second optical axis between the first optical element and the second optical element, and a third optical axis between the second optical element and the second optical component. A directional vector of the first optical axis and a directional vector of the second optical axis define a plane and wherein the first and second optical elements are tilted to cause a crossing of the projection of the third optical axis in to the plane and the first optical axis.

There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength &#x2266;193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

There is provided a multi-mirror-system for an illumination system, especially for lithography with wavelengths &#x2266;193 nm. The system includes light rays traveling along a light oath from an object plane to an image plane, and an arc-shaped field in the image plane, whereby a radial direction in the middle of the arc-shaped field defines a scanning direction. The first mirror and the second mirror are arranged in the light path in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm in the scanning direction. Furthermore, the light rays are impinging on the first mirror and the second mirror with incidence angles &#x2266;30&#xb0; or &#x2267;60&#xb0; relative to a surface normal of the first and second mirror.

Multi mirror system for an illumination system

There is provided an illumination system that includes (a) a light source that emits light having a wavelength &#x2266;193 nm, where the light provides a predetermined illumination in a plane distant from the light source and defines a used area in the plane, and (b) a sensor, situated in or near the plane, for detecting light outside the used area.

Illumination system for a wavelength of &#x2266; 193 nm, with sensors for determining an illumination

There is provided an illumination system for microlithography. The illumination system includes an optical element having a plurality of field raster elements, a plane in which a field is illuminated, and a grazing incidence mirror situated in a light path from the optical element to the plane, after the optical element. The illumination system has no other grazing incidence mirror in the light path, after the optical element and before the plane.

There is provided an illumination system. the illumination system includes (a) a source of light having a wavelength of less than or equal to 193 nm, and (b) an optical element in a path of the light, having a first raster element, a second raster element, a third raster element and a fourth raster element situated thereon. The second raster element is adjacent to the first raster element, and located a first distance from the first raster element. The fourth raster element is adjacent to the third raster element, and located a second distance from the third raster element. The second distance is different from the first distance.

There is provided an illumination system for lithography with wavelengths of &#x2266;193 mn. The system comprises a first optical element, which is divided into first raster elements and lies in a first plane. The first plane defines an x-direction and a y-direction, the first raster elements each have an x-direction and a y-direction with an aspect ratio, and at least two of the first raster elements have aspect ratios of different magnitude.

Illumination system with raster elements of different sizes

There is provided a projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm. The apparatus includes an optical element with a pupil raster element, and a projection objective with a real entrance pupil. The optical element is situated in or near a plane defined by the real entrance pupil.

There is provided an illumination system. The illumination system includes a first light source and a second light source, each of which are for providing light having a wavelength &#x2266;193 nm, and an optical element. The first light source illuminates a first area of the optical element and the second light source illuminates a second area of the optical element.

EUV illumination system having a plurality of light sources for illuminating an optical element

There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength &#x2266;193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.

Collector with fastening devices for fastening mirror shells

Growing community of inventors

Aalen, Germany

Martin Antoni