Unisearch Limited

Newsouth Innovations Pty Limited

Pacific Solar Pty Limited

Martin Andrew Green

Stuart Ross Wenham

Xiaojing Hao

Zhengrong Shi

Paul Alan Basore

Stewart Ross Wenham

Ziheng Liu

Andrew W Blakers

Alison Maree Wenham

Jingjia Ji

Anita Wing Yi Ho-Baillie

Jing Jia Ji

Christiana B Honsberg

Jerzy M Kurianski

Chang Yan

Narayanan Srinivasamohan

Wei Li

Michael Y Taouk

Fangyang Liu

Kaiwen Sun

Shiyou Chen

Robert John Patterson

Jialiang Huang

Xu Liu

Chao-Yang Tsao

A method of forming a photovoltaic device comprising a perovskite photovoltaic cell, particularly a method of forming a perovskite solar cell (PSC), is disclosed having a hole transport layer comprising an additive that may result in one or more of reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; improved dopant homogeneity and increased hydrophobicity of the hole transport layer. Also disclosed are PSCs so formed, showing one or more improved properties.

Perovskite solar cell and method of making the same

Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups:,,,,,,, Ī or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group,,,,,,, Ī or 0 includes an element not formally being from group,,,,,,, Ī or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.

Adamantine semiconductor and uses thereof

A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.

Copper-based chalcogenide photovoltaic device and a method of forming the same

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

Method for forming a virtual germanium substrate using a laser

A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photovoltaic junction. The solar cell includes a surface region or regions of heavily doped material and the contact comprises a contact metallisation formed over the heavily doped regions to make contact thereto. Surface keying features are located in the semiconductor material into which the metallisation extends to assist in attachment of the metallisation to the semiconductor material.

Metal adhesion

A method is presented for forming a Ge containing layer on a Si substrate. The method includes providing a crystalline Si substrate having a surface that has a crystallographic orientation, heating the Si substrate in a vacuum environment, exposing the Si substrate to a surfactant that is suitable for growth of the Ge containing layer on the crystalline Si using surfactant mediation, and thereafter growing the Ge containing layer on the surface of the heated Si substrate using a suitable sputtering technique. The conditions of the growth of the Ge containing layer are selected such that a thin Ge containing layer is formed on the surface of the Si substrate. The thin Ge containing layer has a surface that has crystallographic properties suitable for epitaxial growth of a layer of a further material on the surface of the thin Ge containing layer.

Method of forming a germanium layer on a silicon substrate

A solar conversion assembly comprises: a) a type III-V multiple cell stack solar cell device b) a silicon solar cell device c) a band splitting device located relative to the type III-V solar cell device and the silicon solar cell device. The band splitting device splits light falling on the splitting device into a plurality of wavelength bands and directs a first of said bands to the type III-V solar cell device and the second of said bands to the silicon solar cell device.

Si cells with III-V multijunction cells

A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/&deg; C. below the strain point.

Forming a crystalline semiconductor film on a glass substrate

A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm&plusmn;20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Thin films with light trapping

A method of making contacts on solar cells is disclosed. The front surface ( ) of a substrate ( ) is coated with a dielectric or surface masking layer or layers ( ) that contains dopants of the opposite polarity to those used in the surface of the substrate material ( ). The dielectric layers or layers ( ) not only acts as a diffusion source for forming the emitter for the underlying substrate ( ) when heat treated, but also acts as a metallization mask during the subsequent electroless plating with solutions such as nickel and copper. The mask may be formed by laser scribing ( ) which melts the layer or layers ( ), thereby more heavily doping and exposing zones ( ) where metallization is required.

Self aligning method for forming a selective emitter and metallization in a solar cell

The method is provided for contact formation in semiconductor devices. The method involves forming an insulating layer over an active region to be contacted to, forming holes or openings in the insulating layer to expose the active region and forming an aluminium layer over the insulating layer. A source of non-crystalline semiconductor material or damaged crystalline material is located in contact with the aluminium layer such that the non-crystalline or damaged crystalline material is dissolved in the aluminium layer and redeposited on the surface of the semiconductor material to be contacted to. The semiconductor material is deposited by solid phase epitaxial growth and carries with it, aluminium atoms which leave the semiconductor material as heavily doped p-type material.

Metal contact scheme using selective silicon growth

The present invention makes use of geometry of grooves formed in a substrate, to allow a dielectric layer to be deposited with some regions of the grooves having a substantially thinner layer deposited than top surfaces of the substrate. These regions of reduced thickness dielectric within the grooves are then prematurely etched by an appropriate chemical, or other, etchant capable of controllably etching away the dielectric layer, with the result that in these regions the silicon surface can be exposed and plated by a metallization while the top surface remains protected by the dielectric material. The remaining dielectric material can optionally be required to act as an anti-reflective coating. The invention is applicable in making buried contact solar cells.

Growing community of inventors

Bronte, Australia

Martin Andrew Green