Novaled Ag

Novaled Gmbh

Martin Ammann

Ansgar Werner

Benjamin Schulze

Horst Hartmann

Olaf Zeika

Michael Limmert

Andrea Lux

Volodymyr Senkovskyy

Regina Luschtinetz

Ulrich Denker

Sven Murano

Andre Gruessing

Max Peter Nüllen

Rene Dathe

Pierre Seidenglanz

Stefan Zott

Peter Robaschik

Anne Fadhel

Jakob Jacek Wudarczyk

André Grüßing

The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C-Ccondensed aryl group and/or at least one unsubstituted or substituted C-Cheteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a Cto Csilyl group, (iv) a Cto Calkyl group, (v) a C to Calkylsilyl group, (vi) a Cto Carylsilyl group, (vii) a Cto Ccycloalkyl group, (viii) a Cto Cheterocycloalkyl group, (ix) a Cto Caiyl group, (x) a Cto Cheteroaryl group, (xi) a Cto Cperfluoro-hydrocarbyl group, or (xii) a Cto Ctrifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer; a composition for use therein, and an organic electronic device prepared this way.

Method for preparing an organic semiconducting layer, a composition for use therein and an organic electronic device

The present invention relates to a method for preparing doped organic semiconductor materials as well as a formulation which may be utilized in that method. The doped organic semiconductor materials are prepared by preparing a solution or suspension containing at least one dopant precursor, at least one organic material to be doped, and a solvent. The solution or suspension is then applied onto a substrate. After removing the solvent, the dopant precursor is converted into a dopant by application of activation energy. The dopant precursor, which is a dimer, oligomer, polymer, dispiro compound, or polycycle, is cleaved by the application of activation energy.

Method for preparing doped organic semiconductor materials and formulation utilized therein

The present invention relates to imidazole derivatives and their use as dopants for doping an organic semiconductor matrix material, organic semiconductor materials and electronic or optoelectronic structural elements.

Imidazole derivatives and their use of dopants for doping organic semiconductor matrix material

The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof to organic semiconductive materials and to electronic and optoelectronic components.

Heterocyclic radical or diradical, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, the use thereof, organic semiconductive material and electronic or optoelectronic component

Growing community of inventors

Dresden, Germany

Martin Ammann