Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies International Sales Pte. Limited

Marshall Maple

David E Bockelman

Young Kwon

Ashish Alawani

Joo Min Jung

Ray Myron Parkhurst

Li Sun

Sarah Kay Haney

Domingo Figueredo

Deog-Soon Choi

James Wholey

Husnu Masaracioglu

A module includes a circuit package, which includes first and second electronic components on a substrate, internal and external shields, and a molded compound. The first electronic component includes a first die substrate with first electronic circuitry that generates electromagnetic radiation. The second electronic component includes a second die substrate with second electronic circuitry. The internal shield is electrically connected to ground and substantially covers a surface of the second die substrate facing away from the substrate, the internal shield being configured to shield the second electronic circuitry from the electromagnetic radiation generated by the first electronic circuitry. The molded compound is disposed over the substrate and the first and second electronic components, and the external shield is disposed on at least one outer surface of the circuit package and electrically connected to ground. The external shield is configured to protect the circuit package from external electromagnetic radiation and environmental stress.

Circuit package with internal and external shielding

An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a substrate, pluralities of vias disposed in the substrate. The vias are disposed in a hexagonal arrangement.

Via structures for thermal dissipation

A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Hybrid power amplifier having electrical and thermal conduction path

Hybrid power amplifier comprising heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductor (CMOS) devices

A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices.

Semiconductor structure comprising moisture barrier and conductive redistribution layer

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Cupertino, CA, United States of America

Marshall Maple