Roche Sequencing Solutions, Inc.

Marowen Ng

Wing Kei Au

Pirooz Parvarandeh

John S Foster

Kenneth Allen Honer

Jason Komadina

Guojun Chen

Ronald L Cicero

Disclosed herein are ruthenium-containing materials, such as ruthenium containing materials having a double layer capacitance ranging from between about 180 pF/umto about 320 pF/um. In some embodiments, the ruthenium-containing materials are suitable for use in electrodes. In some embodiments, the ruthenium-containing materials are suitable for use in nanopore sequencing devices.

Nanopore sequencing device comprising ruthenium-containing electrodes

A nanopore cell may include a well having a working electrode at a bottom of the well. The well may be formed within a dielectric layer, where the sidewalls of the well may be formed of the dielectric or other materials coating the walls of the dielectric layer. Various materials having different hydrophobicity and hydrophilicity can be used to provide desired properties of the cell. The nanopore in the nanopore cell can be inserted in a membrane formed over the well. Various techniques can be used for providing a desired shape and other properties e.g., of materials and processes for forming the well.

Nanopore well structures and methods

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San Jose, CA, United States of America

Marowen Ng