Agere Systems Guardian Corp.

Agere Systems Inc.

Marlin Wilbert Focht

Ronald Eugene Leibenguth

Claude Lewis Reynolds, Jr

Aaron Eugene Bond

A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580&deg; C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level. A semiconductor optoelectronic device is formed to include such a contact layer, the P-type dopant impurity present in an atomic concentration and the contact layer having a free carrier concentration being greater than the atomic concentration.

Enhancement of carrier concentration in As-containing layers

A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580&deg; C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level.

Enhancement of carrier concentration in As-containing contact layers

A bond pad having reduced capacitance is disclosed which is useful in fabricating integrated circuit and communications devices. The bond pad is disposed within a select bond pad area and comprises a ribbon of conductive material within the select pad area and a two-phased region of air and conductive material. Also, at least one interconnect area is disposed within the bond pad area. The ribbon is coupled to the two-phased region, and the interconnect is coupled to the ribbon and to the device. Inclusion of air within the bond pad structure reduces the capacitance of the device, while the surface area of the bonding pad is maintained to at least substantially retain the adhesive properties of the pad.

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Williams Township, PA, United States of America

Marlin Wilbert Focht