Koninklijke Philips Corporation N.V.

Marleen Mescher

Johan Hendrik Klootwijk

Nico Maris Adriaan De Wild

Manuel Eduardo Alarcon-Rivero

Bout Marcelis

Pascal De Graaf

An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.

Integrated circuit with sensing transistor array, sensing apparatus and measuring method

Integrated circuit () comprising a semiconductor substrate (); an insulating layer () over said substrate; an first transistor () on said insulating layer, said first transistor comprising an exposed channel region () in between a source region () and a drain region (); and a voltage waveform generator () conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform () comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.

Integrated circuit with nanowire ChemFET-sensors, sensing apparatus, measuring method and manufacturing method

An integrated circuit () comprising a substrate (); an insulating layer () over said substrate; and a first nanowire element () and a second nanowire element () adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer () over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.

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Eindhoven, Netherlands

Marleen Mescher