Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technologies Dresden Gmbh

Markus Winkler

Rainald Sander

Michael Asam

Matthias Stecher

Marcus Nuebling

Franz Hirler

Thorsten Meyer

Markus Zundel

Andreas Peter Meiser

Steffen Thiele

Tommaso Bacigalupo

Peter Nelle

Marco Bachhuber

Davide Giacomini

Ludger Borucki

Wolfgang Horchler

Carmelo Giunta

Matthias Weinmann

Mathias Hans-Ulrich Alexander Von Borcke

Erwin Vogl

An example a circuit for controlling a power converter comprises a first power domain circuit including a first control circuit and a first driver circuit, wherein the first control circuit controls the first driver circuit to drive a first semiconductor device, wherein a second power domain circuit includes a second control circuit and a second driver circuit. The first control circuit is configured to receive a control signal for controlling the second driver circuit to drive a second semiconductor device; and identify, based on the control signal, a future electrical characteristic of a second power domain output of the power converter. Additionally, the first control circuit is configured to determine, based on the future electrical characteristic of the second power domain output of the power converter, whether to adjust one or more control parameters for controlling the first driver circuit to drive the first semiconductor device.

Analyzing a control signal in order to control a power converter to deliver energy to a load

An example controller for a flyback power converter includes a secondary-side circuit comprising a secondary-side controller. The secondary-side controller is configured to sense an electrical characteristic of a secondary-side output of the flyback power converter, select, based on the sensed electrical characteristic, a power mode, and transmit, over a communication channel, a control message specifying the selected power mode. A primary-side circuit of the controller includes a primary-side controller. The primary-side controller is configured to receive, over the communication channel, the control message specifying the selected power mode and control primary-side flyback drive circuitry of the primary-side circuit to drive a primary-side output of the flyback power converter according to the selected power mode so as to control a value of the electrical characteristic of the secondary-side output of the flyback power converter.

Control loop for flyback power converter

A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A plurality of gate electrodes is arranged in trenches of the semiconductor body. The trenches have a longitudinal direction and extending parallel relative to each other. The longitudinal direction of the trenches extends in a first lateral direction of the semiconductor body. The body regions and the source regions are arranged between the trenches. The body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body. In the first horizontal surface, the source regions and the body regions are arranged alternately in the first lateral direction. A source electrode is electrically connected to the source regions and the body regions in the first horizontal surface.

Vertical transistor with improved robustness

An electronic circuit includes a first transistor device and a second transistor device of the same conductivity type. The first transistor device is integrated in a first semiconductor body and includes a first load pad at a first surface of the first semiconductor body and a second load pad at a second surface of the first semiconductor body. The second transistor device is integrated in a second semiconductor body and includes a first load pad at a first surface of the second semiconductor body, and a second load pad at a second surface. The first load pad of the second transistor device is mounted to the first load pad of the first transistor device and the second load pad of the first transistor device is mounted to an electrically conducting carrier.

Electronic switching and reverse polarity protection circuit

A method for processing a semiconductor device in accordance with various embodiments may include: providing a semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second pad; and electrically connecting the first pad and the second pad to one another after applying the at least one electrical test potential.

Semiconductor devices and processing methods

A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true.

Switching control circuit for thermal protection of transistors

A power circuit includes a power transistor for feeding a load current to a load, a measuring transistor for coupling out a measurement current dependent on the load current, at least two coupling transistors for dividing the measurement current into an internal measurement current and into an external measurement current, wherein the external measurement current can be fed to an external evaluation circuit, and the internal measurement current is fed to an internal evaluation circuit for evaluation. A third coupling transistor can be coupled to the measuring transistor if a measuring device determines a non-coupled state, and the third coupling transistor can be decoupled from the measuring transistor if the measuring device determines a coupled state. The measuring device determines the coupled state if the external evaluation device is coupled to the power circuit, and the measuring device determines a non-coupled state if the external evaluation device is not coupled to the power circuit.

Power switch with an overcurrent protection device

Bridge driver circuit with integrated charge pump is disclosed. One embodiment provides a driving circuit section of a charge pump capacitor being formed with power switch components and/or diodes of a bridge circuit section.

Bridge driver circuit with integrated charge pump

A method for setting a reference potential of a current sensor in a power semiconductor device is disclosed. On the basis of a specific geometry and a typical two-dimensional potential distribution of the power semiconductor device, a plurality of tapping points is predetermined on an area of the power semiconductor device. On the basis of the specific geometry of the power semiconductor device, a line course between the tapping points and a measuring point for measuring a potential average value is determined and realized. Respective potential values are detected at the tapping points and fed to the measuring point. The potential average value is determined at the measuring point. The potential of the current sensor is set to the potential average value thus determined.

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Munich, Germany

Markus Winkler