Robert Boschgmbh

Markus Widenmeyer

Richard Fix

Alexander Martin

Denis Kunz

Martin Schreivogel

Andreas Krauss

Oliver Wolst

Robert Roelver

Norbert Breuer

Stefan Henneck

Andreas Letsch

Petra Neff

Steffen Katzenberger

Thomas Pilz

Dieter Elbe

A sensor is configured to measure the carbon dioxide concentration in a gas mixture. The sensor has a dielectric layer arranged between a layer-like first electrode and a layer-like second electrode. The second electrode is a composite electrode that has at least one carbonate and/or one phosphate as first material and at least one metal as second material. This sensor can be manufactured by a method comprising applying a layer-like first electrode to a substrate, applying a dielectric layer to the first electrode, and applying a layer-like second electrode to the dielectric layer. The second electrode is applied as a composite electrode that has at least one carbonate and/or one phosphate as first material and has at least one second material that has an electrical conductivity of more than 10-2 S/m.

Sensor for measuring the carbon dioxide concentration in a gas mixture, and method for manufacture thereof

A hydrolysis-stable mesoporous silica material has surface bearing functional groups of formula OSiR, where x is in a range from 1-3 and where each of the radicals R independently of any other contains c carbon atoms, n nitrogen atoms and o oxygen atoms, for which At least &#x2153; of the nitrogen atoms and of the oxygen atoms carries in each case at least one hydrogen atom or is ionic. At least one radical R of a functional group is crosslinked with another radical R of a different functional group. The material is produced by providing a mesoporous silica material and functionalizing the surface of the mesoporous silica material with at least one silane of formula YSiR, where x is in a range from 1-3 and where Y is a functional group which reacts with a hydroxyl group on the surface of the mesoporous silica material. There is crosslinking of the surface functionalities by treatment with a coupling reagent having at least two reactive groups, each reactive group reacting with a radical R.

Hydrolysis-stable mesoporous silica material and method for producing it

A method for producing a gas sensor device for detecting a gaseous analyte includes providing a sensor body comprising a semiconductor substrate, in which a cavity section is shaped, and a solid electrolyte layer arranged at a surface of the substrate. The electrolyte layer is not covered by the substrate in the cavity section. The method includes producing a signal conductor layer deposited dry-chemically at a substrate side of the sensor body, such that, in the region of the electrolyte layer not covered by the substrate in the cavity section, a cutout section is shaped in the signal conductor layer, in which the signal conductor layer is removed or not deposited. The method includes applying measuring electrodes to the electrolyte layer by a wet-chemical process. One measuring electrode is arranged in the cutout section and one measuring electrode is arranged on an electrolyte layer side of the sensor body.

Method for producing a gas sensor device for detecting at least one gaseous analyte, and gas sensor device for detecting at least one gaseous analyte

An exhaust gas guide element for conducting at least a portion of an exhaust gas to a sensor for a vehicle. The exhaust gas guide element has a greater extent in a direction of a longitudinal axis than in a direction of a transverse axis, and is gas-permeable along the direction of the longitudinal axis. One end of the gas guide element along the direction of the longitudinal axis is configured as a receiving region, and the opposite end is configured as a measuring region. A sensor can be positioned in the measuring region, and a gas receiving element is positioned in the receiving region.

Exhaust gas guide element, exhaust gas measuring device for a vehicle, and method for producing an exhaust gas guide element

An apparatus and a method for identifying a COcontent of a fluid. The apparatus includes: an absorber device having a porous material, the absorber device being capable of being brought into contact with the fluid; pores of the porous material having at least one hydrophilic first chemically functional group; the first chemically functional group being joined to the porous material; the first chemically functional group having the property of reacting in alkaline fashion with water; an electrode device that is disposed on the absorber device for electrical contacting of the absorber device; and an evaluation device that is electrically connected to the electrode device and by which an electrical property of the absorber device is measurable to identify the COcontent of the fluid.

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A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.

Electronic component for high temperatures

A sensor element of a gas sensor for determining gas components in gas mixtures includes a field effect transistor and/or a diode which has a current flow which changes upon contact with a gas to be detected, and which is positioned in a manner protected, by a protective cap, from direct access by the gas mixture. The protective cap has a heating element, a glass former, and/or an oxidation catalyst.

Sensor element of a gas sensor and method for operating the same

A gas-sensitive semiconductor device having a semiconductive channel () which is delimited by a first () and a second () channel electrode, and having a gate electrode () which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel () occurs as a response to an action of a gas. The gate electrode () and/or a gate insulation layer () which insulates the gate electrode from the channel, and/or a gate stack layer () which may be provided between the gate electrode and the channel have/has two surface sections () which differ in their sensitivity to gases.

Gas-sensitive semiconductor device

A gas concentration of a gas may be detected from a gas mixture using gas detectors sensitive to the gas. A gas concentration may be measured by a first gas detector at a first operating temperature, and a first signal characteristic of the measured gas concentration may be provided. An operating temperature of the first gas detector may be changed to a second operating temperature, or a second gas detector having the second operating temperature may be provided. A gas concentration may then be measured at the second operating temperature, and a second signal characteristic of the measured gas concentration may be provided. The gas concentration of the gas from the gas mixture may be determined using a first concentration value allocated to the first signal and a second concentration value allocated to the second signal.

Method and control unit for detecting a gas concentration of gas from a gas mixture

A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.

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Schoenaich, Germany

Markus Widenmeyer