Forschungsverbund Berlin E.v.

Freiberger Compound Materials Gmbh

Ixys Corporation

Markus Weyers

Eberhard Richter

Frank Habel

Hans Wenzel

Götz Erbert

Andrea Knigge

Frank Brunner

Marit Gründer

Michael A Kneissl

Paul Crump

Goetz Erbert

Sven Einfeldt

Hans-Joachim Würfl

Günther Tränkle

Martin Zorn

Olaf Brox

Andre Maassdorf

Christoph M Schultz

Joachim Piprek

Christian Hennig

Guenther Traenkle

Stefan Moessner

Michael Kneissl

Hernan Rodriguez

Frank Bugge

Andre Maaßdorf

Viola Küller

Arne Knauer

The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation &#x3b5;in the range of &#x3c;0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation &#x3b5;in the range of &#x3c;0.

Processes for producing III-N single crystals, and III-N single crystal

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

Method for producing III-N single crystals, and III-N single crystal

The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.

Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current

The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer.

P-contact and light-emitting diode for the ultraviolet spectral range

An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.

System for frequency conversion, semiconducting device and method for operating and manufacturing the same

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

Diode laser and method for manufacturing a high-efficiency diode laser

A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium () having an emission maximum at a first wavelength (&#x3bb;), wherein a first reflector () is arranged below the stripe-shaped active medium () and a second reflector () is arranged above the stripe-shaped active medium (), with the first reflector () facing the second reflector (), wherein the first reflector () and a second reflector () have a reflectivity maximum in the region of the first wavelength (&#x3bb;), wherein a third reflector () and a fourth reflector () are each arranged on a side above or next to the stripe-shaped active medium (), wherein the third reflector () faces the fourth reflector (), and wherein the third reflector () and the fourth reflector () have a reflectivity maximum in the region of a second wavelength (&#x3bb;), wherein the first wavelength (&#x3bb;) is greater than the second wavelength (&#x3bb;).

Two-cavity surface-emitting laser

The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.

Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy

The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely. The semiconductor component according to the invention has a substrate (), a first charge carrier barrier layer () arranged on the substrate (), a photoluminescent layer () arranged on the first charge carrier barrier layer (), a second charge carrier barrier layer () arranged on the photoluminescent layer (), and an active electroluminescent layer () composed of at least one inorganic semiconductor and arranged on the second charge carrier barrier layer (), wherein the photoluminescent layer () absorbs at least part of the light emitted by the electroluminescent layer (), and an at least partly transparent contact layer () arranged on the active electroluminescent layer () is furthermore provided.

Light-emitting semiconductor component comprising electroluminescent and photoluminescent layers and associated method of production

A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transitional layer has a dopant concentration of a second level and is a group III-V compound material. An epitaxial layer of first conductivity is grown over the transitional layer and has a dopant concentration of a third level. Electrical currents flow through the transitional and epitaxial layers when the device is operating.

Semiconductor devices having group III-V compound layers

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Wildau, Germany

Markus Weyers