Wacker Chemie Ag

Markus Wenzeis

Piotr Filar

Olaf Seifarth

Stefan Sommerauer

Thomas Schröck

Jürgen Wolff

A method for producing polycrystalline silicon includes introducing a reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane, into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated filament rod upon which by deposition silicon is deposited to form a polycrystalline silicon rod. During the deposition, the the morphology of the silicon rod is determined.

Method for producing polycrystalline silicon

Polycrystalline silicon is produced in a chemical vapour deposition reactor, wherein, outside the reactor at at least one position on at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded. The vibrations may be used to identify rod fall over and other events occurring within the reactor.

Process for producing polycrystalline silicon

Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

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Wurmannsquick, Germany

Markus Wenzeis