Carl Zeiss Smt Gmbh

Advanced Mask Technology Center Gmbh + Co. Kg

Carl Zeiss Sms Ltd.

Markus Waiblinger

Axel Feicke

Michael Budach

Dirk Beyer

Jens Oster

Thomas Scherübl

Martin Sczyrba

Timo Wandel

Karsten Bubke

Dieter Weber

The present invention relates to a method for ascertaining a repair shape for processing at least one defect of a photolithographic mask including the following steps: (a) determining at least one correction value for the repair shape of the at least one defect, wherein the correction value takes account of a position of at least one pattern element of the photolithographic mask, said at least one pattern element not contacting the at least one defect; and (b) correcting the repair shape by applying the at least one correction value.

Method and apparatus for ascertaining a repair shape for processing a defect of a photolithographic mask

An apparatus for correlating at least two images of a photolithographic mask that at least partially overlap, in which the apparatus includes a correlation unit that is provided to use at least one random variation, which is present in the at least two images, of at least one structural element of the photolithographic mask for the correlation of the at least two images.

Apparatus and method for correlating images of a photolithographic mask

The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Method for determining the performance of a photolithographic mask

Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively 'the layer'). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.

Method for producing a photomask, method for patterning a layer or layer stack and resist stack on a mask substrate

A method of determining an exposure dose for writing a pattern using an electron beam writer determines a target dose in the exposure region to obtain a predetermined energy deposition in a specific position of the exposure region, the predetermined energy deposition being larger than a reference energy deposition in the non-exposure region. The target dose is locally increased in a marginal region of the exposure region (the marginal region being adjacent the exposure boundary) to a value that obtains an energy deposition in the marginal region higher than the predetermined energy deposition. Optionally, the target dose can be locally decreased in an intermediate region of the exposure region (the intermediate region being adjacent the marginal region) to a value that obtains an energy deposition in the intermediate region smaller than the predetermined energy deposition. Also provided is an exposure device for carrying out the method.

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Constance, Germany

Markus Waiblinger