Materion Advanced Materials Germany Gmbh

Heraeus Deutschland Gmbh & Co Kg

W.c. Heraeus Gmbh & Co Kg

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Markus Schultheis

Martin Schlott

Christoph Simons

Martin Weigert

Uwe Konietzka

Bernd Szyszka

Sabine Schneider-Betz

Suk-Jae Lee

Jens Wagner

Albert Kastner

Volker Sittinger

Andreas Herzog

Anna Schott

Ben Kahle

Lars Ebel

Wilma Dewald

The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio&#xb7;()/

NiW(X) sputtering target with improved structure

A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.

Double-layer system comprising a partially absorbing layer, and method and sputter target for producing said layer

The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide

Zirconium oxide based sputtering target

Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 mas a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 &#x3bc;m, an oxygen content of less than 50 wt.-ppm, a content of the impurity elements, aluminum, lithium, sodium, calcium, magnesium, barium, and chromium, each of less than 0.5 wt.-ppm, and a metallic purity of at least 99.99% by weight.

Planar or tubular sputtering target and method for the production thereof

An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 &#x3a9;-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Sputter target based on titanium dioxide

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Flieden, Germany

Markus Schultheis