Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Patent Treuhand Gesellschaft Fur Elektrische Gluhlampen Mbh

Siemens Aktiengesellschaft

Markus Richter

Tony Albrecht

Franz Eberhard

Ewald Karl Michael Guenther

Hans-Christoph Gallmeier

Alexander Baumgartner

Markus Burger

Tamas Lamfalusi

Berthold Hahn

Volker Härle

Frank Jermann

Johannes Baur

Martin Zachau

Michael Willsch

Andreas Weimar

Ivar Tangring

David Racz

Peter Gröppel

Wolfgang Rossner

Ivar Tångring

Raimund Oberschmid

Mario Brockschmidt

Guenter Spath

Christian Gatzhammer

Jörg Strauss

Peter Holzer

Sabrina Buckl

Michael Schweizer

In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Optoelectronic component and method for producing an optoelectronic component

A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.

Production of radiation-emitting semiconductor components

A method of producing an optoelectronic component includes providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip including a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip.

Method of producing optoelectronic components and optoelectronic component

An optoelectronic component having a leadframe and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a radiation-emitting semiconductor chip having a mounting surface and side surfaces, a leadframe comprising a first element having a first main extension plane, a second element having a second main extension plane, and a third element having a third main extension plane, wherein the main extension planes are arranged parallel to one another, and wherein the elements are arranged one above the other in a stacking direction; and a reflective casting compound forming a planar surface facing the mounting surface of the semiconductor chip, wherein the semiconductor chip is mounted with the mounting surface on a support surface of the third element, which is smaller than the mounting surface of the semiconductor chip, such that the semiconductor chip projects laterally beyond the support surface of the third element.

Leadframe, optoelectronic component having a leadframe, and method for producing an optoelectronic component

A method includes providing a metallic auxiliary carrier and forming metallic structure elements on the auxiliary carrier by carrying out at least one metal deposition process with the aid of at least one masking layer. Provision is furthermore made for arranging a reflective embedding material enclosing the metallic structure elements on the auxiliary carrier and removing the auxiliary carrier, such that a carrier comprising the structure elements and the embedding material and comprising two opposite main sides is provided. The main sides of the carrier are formed by the structure elements and the embedding material. The method furthermore includes arranging radiation-emitting semiconductor chips on the carrier, arranging a conversion material for radiation conversion on the carrier provided with the semiconductor chips, and carrying out a singulation process of forming separate radiation-emitting components.

Production of radiation-emitting components

A lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.

Lighting device with color scattering layer and method for producing a lighting device

A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. In an embodiment, the conversion lamina includes a base material and a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 &#x3bc;m inclusive and 170 &#x3bc;m inclusive.

Method for producing a conversion lamina and conversion lamina

A method of producing an optoelectronic component includes providing a substrate with an optoelectronic semiconductor chip arranged on a surface of the substrate; providing a mask having a lower layer and an upper layer, wherein the lower layer has a lower opening and the upper layer has an upper opening, which openings jointly form a continuous mask opening, and the lower opening has a larger area than the upper opening; arranging the mask above the surface of the substrate such that the lower layer faces the surface of the substrate and the mask opening is arranged above the optoelectronic semiconductor chip; spraying a layer onto the optoelectronic semiconductor chip through the mask opening; and removing the mask.

Method of producing an optoelectronic component

A method of producing a conversion element includes providing a substrate having a surface; forming a first mask structure above the surface, wherein the first mask structure has first webs and first openings arranged between the first webs and the first openings form cavities in which the surface of the substrate is accessible; arranging a second mask structure above the first mask structure, wherein the second mask structure has second webs and second openings arranged between the second webs, the first webs are at least partly covered by the second webs, and the cavities remain at least partly accessible through the second openings; spraying a material into the cavities through the second openings; removing the second mask structure; and removing the first mask structure.

Method of producing a conversion element

A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. A base material including a conversion substance contained therein is applied to a substrate by means of a double-layered stencil. Furthermore, a conversion lamina for a radiation-emitting semiconductor component includes a base material and a conversion substance embedded therein. The thickness of the conversion lamina is in a range of between 60 &#x3bc;m and 170 &#x3bc;m inclusive.

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:

Method for producing a plurality of radiation-emitting semiconductor chips

A wavelength-converting element having the shape of a small flat plate having a basic shape with an outer contour, wherein the wavelength-converting element includes a cut-out compared to the basic shape which is defined by a boundary edge, and at a conjunction of the boundary edge and the outer contour, an angle of less than 90&#xb0; is enclosed.

Wavelength-converting element, optoelectronic component and printing stencil

The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

In a luminescence diode chip having a radiation exit area () and a contact structure () which is arranged on the radiation exit area () and comprises a bonding pad () and a plurality of contact webs () which are provided for current expansion and are electrically conductively connected to the bonding pad (), the bonding pad () is arranged in an edge region of the radiation exit area (). The luminescence diode chip has reduced absorption of the emitted radiation () in the contact structure ().

Growing community of inventors

Burglengenfeld, Germany

Markus Richter