Aixtron Ag

Aixtron Se

Aixtron, Inc.

Markus Reinhold

Gerhard Karl Strauch

Johannes Käppeler

Peter Baumann

Johannes Kaeppeler

Gerd Strauch

Bernd Schulte

A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes () into each of which opens a feed pipe () for a process gas, each gas volume () being connected to a plurality of corresponding process gas outlets () which open into the bottom () of the gas distributor. In order to increase the homogeneity of the gas composition, the two gas volumes () comprise pre-chambers () located in a first common plane () and a plurality of gas distribution chambers () each associated with a gas volume are provided in a second plane (') adjacent to the bottom of the gas distributor. The pre-chambers () and gas distribution chambers () associated with each gas volume () are connected with connection channels ().

Gas distributor with pre-chambers arranged in planes

The invention relates to a gas inlet element () for a CVD reactor with a chamber (), which has a multitude of bottom-side outlet openings (), via which a process gas introduced into the chamber () via edge-side access openings () exits into a process chamber () of the CVD reactor (). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement () is situated upstream from the access openings (), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

Gas inlet element for a CVD reactor

The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.

Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned

The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber of a reactor, whereby the first process gas flows through a central line having a central outlet opening, and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines and into a mixing chamber and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means. To this end, the invention provides that the second process gas flows through a flow influencing element, which is situated downstream from the mixing chamber and which is provided, in particular, in the form of an annular throttle or of turbulence generator, and flows through an annular pre-chamber situated downstream therefrom, after which said second process gas exits through a gas-permeable gas outlet ring.

Growing community of inventors

Hilden, Germany

Markus Reinhold