Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Oledgmbh

Markus Pindl

Simon Jerebic

Tobias Gebuhr

Martin Brandl

Frank Singer

Thomas Schwarz

Markus Boss

Sandra Sobczyk

Herbert Brunner

Andreas Wojcik

Daniel Leisen

Markus Burger

Thomas Bemmerl

Daniel Richter

Harald Jäger

Christina Keith

Thomas Reeswinkel

Jens Eberhard

Andreas Gruendl

Emilia Dinu

Siegfried Herrmann

Michael Zitzlsperger

Jürgen Moosburger

Alexander Linkov

Jan Marfeld

Matthias Sperl

Juergen Moosburger

Erik Heinemann

Kirstin Petersen

Albert Schneider

Christopher Wiesmann

Michael Bestele

Stephan Preuss

Stephan Preuβ

Ludwig Peyker

Markus Boß

Matthias Lermer

Bernhard Stich

The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

An optoelectronic component comprising a laser diode is disclosed. In an embodiment an optoelectronic component includes a carrier, a laser diode arranged on the carrier, wherein the laser diode is configured to emit electromagnetic radiation in a lateral radiation and a radiation-guiding layer arrangement located in front of the lateral face of the laser diode, wherein the layer arrangement includes at least a first layer and a second layer, wherein the first layer is arranged on the carrier, wherein the second layer is arranged on the first layer, wherein the first layer and the second layer abut each other, wherein the second layer is transparent for the electromagnetic radiation, wherein the first layer has a smaller refractive index than the second layer, and wherein the layer arrangement is arranged such that the electromagnetic radiation of the laser diode is coupled into the second layer, guided in the second layer to a radiation surface of the second layer, and emitted via the radiation surface of the second layer.

Optoelectronic component comprising a laser diode

A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Method of producing an optoelectronic component

A method for producing optoelectronic semiconductor components is disclosed. In an embodiment a method includes A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces; B) applying a clear potting permeable to the radiation directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the main light exit sides; C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier.

Method for producing optoelectronic semiconductor components

A method of producing optoelectronic semiconductor components includes A) providing a chip carrier with electrical conductor structures on a carrier upper side, B) applying at least one semi-conductor chip configured to produce light on at least one of the electrical conductor structures, C) applying at least one sealing structure to at least one of the electrical conductor structures so that the sealing structure completely surrounds at least one contact area when viewed from the top, and D) producing a mold body directly at the at least one semiconductor chip and directly at the at least one sealing structure by transfer molding or injection molding, wherein, in an injection mold, the at least one sealing structure seals the at least one contact area against a material of the mold body so that the at least one contact area remains free of the mold body.

Method of producing optoelectronic semiconductor components

A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

An optoelectronic component includes a housing including a first cavity bounded by a first wall, wherein a circumferentially extending first step is formed at an inner side of the first wall, the first step circumferentially extends around the first cavity obliquely with respect to a bottom of the first cavity, a first optoelectronic semiconductor chip is arranged at the bottom of the first cavity, the first optoelectronic semiconductor chip is embedded into a first potting material arranged in the first cavity and extending from the bottom of the first cavity as far as the first step, and a first potting surface of the first potting material is formed at the first step.

Optoelectronic component and method of producing an optoelectronic component

The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

A method for producing at at least an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a substrate having at least one aperture, applying at least one semiconductor chip to the substrate, arranging barrier structures provided that the barrier structures are not already part of the substrate, wherein the semiconductor chip is spaced apart from the barrier structures as seen in a side cross-section, applying an auxiliary carrier at least to a main radiation exit surface and to the barrier structures, introducing a casting material via the at least one aperture in the substrate so that the casting material is arranged between the barrier structures and the semiconductor chip and between the substrate and the auxiliary carrier, and curing the casting material.

Method for producing at least one optoelectronic component, and optoelectronic component

A light-emitting component includes a light-emitting element and a housing with a cavity. The housing includes a housing material that absorbs at least 80 percent of light in the visible range. The cavity is formed by a limiting wall, formed by a housing surface, and a plane of the element. The light-emitting element arranged within the cavity of the housing and positioned above the element plane includes an emission side located opposite to the element plane. The cavity is at least partially filled with a transparent material composed of a first material and a second material, wherein the first material at least partially covers the limiting wall, and the second material at least partially covers the emission side. A boundary surface is formed between the first material and the second material. A first refractive index of the first material is smaller than a second refractive index of the second material.

Light-emitting component and method of producing a light-emitting component

A method of producing an optoelectronic device includes providing an optical element including an optical lens and including a frame, wherein the frame projects with a receptacle section beyond a first side of the lens, the receptacle section of the frame surrounds a receptacle space, and the receptacle section of the frame includes a bearing face at an inner side; inserting an optoelectronic component and a transparent intermediate element into the receptacle space; placing the intermediate element onto the bearing face; and securing the component and the intermediate element to the frame.

Method of producing an optoelectronic device with a frame projecting with circular receptacle section beyond a first side of a lens

A method of producing an optoelectronic lighting device includes providing a laser chip carrier on which two edge emitting laser chips, arranging a carrier including two optical elements onto the laser chip carrier, forming a respective optical connection by an optical material between a respective laser facet and a respective optical element, singulating the two laser chips by dividing the laser chip carrier between the two laser chips to form two mutually divided laser chip carrier parts, wherein the dividing includes dividing the carrier between the two optical elements to form two mutually divided carrier parts each including one of the two optical elements, such that two singulated laser chips arranged on the respective divided laser chip carrier part are formed, the respective laser facets of which are optically connected to the respective optical element of the respective carrier part by the optical material.

Method of producing an optoelectronic lighting device and optoelectronic lighting device

A device having a reinforcement layer and a method for producing a device are disclosed. In an embodiment a device includes a carrier plate, an electronic component, a shaped body and a reinforcement layer, wherein the electronic component is laterally enclosed by the shaped body, wherein, in a vertical direction, the electronic component is arranged between the carrier plate and the reinforcement layer, wherein the shaped body has a thermal expansion coefficient which is at least three times as large as a thermal expansion coefficient of the carrier plate and at least three times as large as a thermal expansion coefficient of the reinforcement layer, and wherein the carrier plate and the reinforcement layer adjoin the shaped body at least in places and are configured to reduce deformation of the shaped body in an event of temperature fluctuations.

Device having a reinforcement layer and method for producing a device

A method of producing an optoelectronic component includes providing a carrier; securing a sheet including a wavelength-converting material on a top side of the carrier; arranging a grid structure on a top side of the sheet; arranging an optoelectronic semiconductor chip in an opening of the grid structure on the top side of the sheet; arranging a potting material on the top side of the sheet, wherein the grid structure and the optoelectronic semiconductor chip are at least partly embedded into the potting material, and a composite body including the potting material, the sheet, the grid structure and the optoelectronic semiconductor chip is formed; and detaching the composite body from the carrier.

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Tegernheim, Germany

Markus Pindl