Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Opto Semiconductros Gmbh

Markus Maute

Karl Engl

Stefanie Rammelsberger

Robert Walter

Jürgen Moosburger

Sebastian Taeger

Johann Eibl

Lutz Höppel

Johannes Baur

Anna Kasprzak-Zablocka

Johannes Stocker

Thomas Schwarz

Berthold Hahn

Siegfried Herrmann

Ralph Wirth

Matthias Sabathil

Korbinian Perzlmaier

Simon Jerebic

Christian Leirer

Alexander Linkov

Simeon Katz

Guido Weiss

Michael Huber

Kai Gehrke

Georg Hartung

Norwin Von Malm

Tony Albrecht

Patrick Rode

Tobias Meyer

Andreas Ploessl

Lutz Hoeppel

Andreas Weimar

Heribert Zull

Lorenzo Zini

Juergen Moosburger

Nikolaus Gmeinwieser

Tamas Lamfalusi

Rainer Hartmann

Martin Reufer

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent.

Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

The invention relates to an optoelectronic semiconductor component () comprising the following &#x2014;an optoelectronic semiconductor chip (), the lateral surfaces () and lower face () of which are at least partly covered by a molded body () that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (), &#x2014;at least one via () which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (), said via () completely passing through the molded body (), wherein the via () extends from an upper face () of the molded body () to a lower face () of the molded body (), &#x2014;at least one insulating element () which is arranged within the molded body () between the via () and the semiconductor chip () and extends from the upper face () of the molded body () to the lower face () of the molded body (), and &#x2014;an electrically conductive connection () which is connected to the semiconductor chip () and the via () in an electrically conductive manner.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.

Component having improved coupling-out properties

A light emitting semiconductor device includes at least one light emitting semiconductor chip having a semiconductor layer sequence, a light outcoupling surface, a rear face on an opposite side of the semiconductor layer sequence from the light outcoupling surface, and side faces which connect the light outcoupling surface and the rear face. The light emitting semiconductor device further includes a carrier body, having a molded body which covers the side faces of the at least one light emitting semiconductor chip directly and in a positively-locking manner. The carrier body comprises, at the light outcoupling surface of the at least one light emitting semiconductor chip, a top face on which a dielectric mirror is disposed. At least part of the light outcoupling surface is uncovered by the dielectric mirror.

Light emitting semiconductor device

An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

Described is an optoelectronic semiconductor chip () with a built-in bridging element (A) for overvoltage protection.

Optoelectronic semiconductor chip with built-in ESD protection

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Optoelectronic semiconductor chip

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Light emitting diode chip

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production

A radiation-emitting semiconductor chip () is specified, comprising&#x2014;a semiconductor layer sequence () having a first main surface () and a second main surface () situated opposite the first main surface () wherein the semiconductor layer sequence () has an active zone () suitable for generating electromagnetic radiation, &#x2014;a structured mirror layer (), which is electrically non-conductive during operation and is arranged on the side of the first main surface () of the semiconductor layer sequence (), wherein the mirror layer () has at least one mirror region (A,B,C) which regionally covers the first main surface (), &#x2014;at least one encapsulation region (A,B,C) which surrounds the at least one mirror region (A,B,C) on all sides and is in direct contact with the mirror region (A,B,C), wherein the at least one encapsulation region (A,B,C); is electrically non-conductive during operation.

Radiation-emitting semiconductor chip comprising a structured mirror layer which is electrically non-conductive during operation

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.

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Alteglofsheim, Germany

Markus Maute