Siemens Aktiengesellschaft

Markus Lasch

Stefan Stegmeier

Erik Weisbrod

Jörg Zapf

Markus Pfeifer

Albrecht Donat

Axel Ganster

Franziska Lambrecht

Felix Zeyss

Roland Lorz

Ronny Werner

Hubert Baueregger

An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Arrangement for a semiconductor arrangement comprising at least one passive component and a substrate

Various embodiments of the teachings herein include an electronic module comprising: a circuit carrier with an electrically conductive thick film with a thickness of at least 0.5 millimeter; and a plurality of thermally conductive elements connected to one another by a thermally conductive material. The thermally conductive elements have a base area with rotational symmetry.

Electronic module, method for producing an electronic module, and industrial plant

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Munich, Germany

Markus Lasch