Tel Solar Ag

Markus Kupich

Johannes Meier

Tobias Roschek

Markus Bronner

Hanno Goldbach

In the frame of manufacturing a photovoltaic cell a layer () of silicon compound is deposited on a structure (). The yet uncovered surface () is treated in a predetermined oxygen (O) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area ().

Method for manufacturing a photovoltaic cell structure

So as to improve efficiency of a thin-film photovoltaic converter device, during manufacturing of which an intermediate product module is manufactured, which comprises deposition of at least one positively doped, at least one intrinsic and at least one negatively doped silicon-based layer, the addressed intermediate product module is subjected to an annealing step during which the module is subjected to a temperature of between 100&#xb0; C. to 200&#xb0; C. during a time span of half an hour to four hours.

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Buchs, Switzerland

Markus Kupich