Robert Boschgmbh

Markus Kuhnke

Stefan Majoni

Jochen Reinmuth

Heiko Stahl

Timo Schary

Peter Schmollngruber

Friedjof Heuck

Sebastien Loiseau

Viktor Morosow

Ricardo Zamora

Marcus Pritschow

Stefan Krause

Penny Weir

A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.

Method for manufacturing a piezoelectric resonator

A microelectromechanical structure, including a functional element situated in a cavity of the microelectromechanical structure. The functional element includes an aluminum nitride layer. The cavity is closed by a cap layer. The cap layer includes epitaxial silicon. A method for manufacturing a micromechanical structure is also described.

Microelectromechanical structure including a functional element situated in a cavity of the microelectromechanical structure

An electrical contacting between a surrounding wiring and a conductor region. The conductor region is situated in a conductor layer above an SOI wafer or SOI chip. A cover layer is situated above the conductor layer and below the surrounding wiring. The cover layer has a contacting region. The contacting region is insulated from the rest of the cover layer by a first configuration of recesses. An opening is formed at least in the contacting region. A metallic material is situated in the opening. The metallic material connects the surrounding wiring and the conductor region.

Electrical contacting and method for producing an electrical contacting

A method for producing a micromechanical element includes producing a micromechanical structure, the micromechanical structure having: a functional layer for a micromechanical element, a sacrifical layer at least partly surrounding the functional layer, and a closure cap on the sacrifical layer. The method further includes applying a cover layer on the micromechanical structure. The method further includes producing a grid structure in the cover layer. The method further includes producing a cavity below the grid structure, as access to the sacrifical layer. The method further includes at least partly removing the sacrifical layer. The method further includes applying a closure layer at least on the grid structure of the cover layer for the purpose of closing the access to the cavity.

Method for producing a micromechanical element

A method for producing a via in a wafer includes providing a wafer, comprising silicon. The method includes producing a conductive region, in the form of a conductor track, preferably composed of polycrystalline silicon, in the wafer. The method includes producing a hole in the wafer such that the hole is fluidically connected to the conductive region and the sidewalls of the hole comprise silicon. The method includes applying a tungsten hexafluoride-resistant protective layer, produced from silicon oxide, in the region of the surface of the hole that is to be produced or has been produced, such that an opening of the hole is free of a protective layer. The method includes applying tungsten hexafluoride to the hole and the region of the opening of the hole by a reducing-agent-free vapor phase deposition process, preferably in the form of a CVD process, for producing the via.

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Wannweil, Germany

Markus Kuhnke