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Markus Keller

Diego Sologuren-Sanchez

Walter Holaus

Thomas Schoenemann

Arben Sabani

Lukas Zehnder

Olaf Hunger

Jochen Rees

Leopold Ritzer

Sami Kotilainen

Jochen Kiefer

Vincent Tilliette

Guido Meier

Urs Kruesi

Marc Mollenkopf

Tilo Bolli

Martin Holstein

Gerhard Hochstuhl

Miguel Garcia

Marianne Pleines

Roland Würgler

Ion Gavrilita

J&ouml;rg Peter

Kalpesh Chauhan

Alexander Stoev

Christian Hauswirth

Bruno Hofstetter

Mercedes Dominguez Calvo

Sanel Pidro

Thomas-Juerg Willi

René Kallweit

Anupam Arya

Mercedes Calvo Dominguez

Rene Freidinger

Zoran Andjelic

A gas-insulated switchgear bay includes at least three circuit breakers, which define a longitudinal direction, for interrupting conductor phases at different electrical potentials. The circuit breakers each have a first and second power connection, which define a first and second axis extending orthogonally to the longitudinal direction. A first busbar section is attachable to the first power connection, and the first busbar conductors thereof, each define a third axis, which extends orthogonally to the longitudinal direction and the first axis. A second busbar section is attachable to the second power connection, and the second busbar conductors thereof, each define a fourth axis, which extends orthogonally to the longitudinal direction and the first axis. A first distance between the first and second axes is such that the fourth axis is arranged with respect to position and orientation on a common straight line with the third axis in the second mounting state.

Gas-insulated switchgear arrangement

An insulation spacer for a gas insulated device includes an insulator disc and an armature extending around an outer periphery of the insulator disc and holding the same. The armature is ring-shaped defining a ring axis and includes two ring base surfaces extending substantially perpendicularly to the ring axis; and a ring inner surface being arranged between the two ring base surfaces and facing the ring axis. Further, the ring inner surface includes at least one protrusion directed radially inwardly towards the ring axis, the at least one protrusion being shaped such that it locks the insulator disc in the armature against movement in both directions parallel to the ring axis.

Insulation spacer for a gas insulated device and method of producing same

A high-voltage circuit breaker has an interrupter unit, a closing resistor and a switch which is connected in series with the closing resistor. The interrupter unit has a driven first interrupter contact which can move along an axis and interacts with a second interrupter contact, which is arranged on the axis in order to open and close the high-voltage circuit breaker. The switch has a switching contact which can rotate about a rotation shaft (D) and whose rotary movement is coupled by of a link control to the movement along the axis (A) of the first interrupter contact.

High-voltage circuit breaker having a switch for connection of a closing resistor

A switching chamber insulation arrangement and a circuit breaker having such a switching chamber insulation arrangement are provided. The switching chamber insulation arrangement provides improved heat dissipation in the area of the contact areas of switch contact poles. The switching chamber insulation arrangement includes a strut arrangement having a plurality of struts. Each strut has a first foot area, a second foot, area and a center area which is located between the first foot area and the second foot area, respectively. The struts are arranged along a circumference around a longitudinal extent axis of the strut arrangement. The strut arrangement has a first mechanical coupling area on a side of the first foot areas for coupling to a first pole of a circuit breaker, and a second mechanical coupling area on a side of the second foot areas for coupling to a second pole of a circuit breaker.

Switching chamber insulation arrangement for a circuit breaker

The shaft includes two electrically conducting connecting pieces (), which can be connected to different electric potentials, and also an insulating tube (), which can be subjected to torsional loading. The two connecting pieces () are respectively fastened to one of the two ends of the insulating tube (). In order that the shaft can also transmit great torques, the following means are provided for fastening at least one of the two connecting pieces (): An adhesive joint (), which is formed by a cone () formed into one end of the insulating tube () and made to run from the circumferential surface () to the inner surface () of the insulating tube () and also by a mating cone () formed into the at least one connecting piece (), and by a gap () formed by the cone () and mating cone () and filled with adhesive. Alternatively, the fastening means may also include an embedding, which has a portion of the at least one connecting piece, made to extend in the direction of the axis of the insulating tube, as the part to be embedded, and the end portion of the insulating tube produced by a casting process, as the embedding body.

Shaft, method for producing it and device for carrying out the method

The basis taken is a cooling element () made of a metal or of a metal alloy having at least one cooling rib () which is connected to a metal housing () for an operating means. The intention is to provide a cooling element () which has an improved cooling capacity. The inventive cooling element () is detachably connected to the housing () by means of fixing means. The cooling element () is provided with a thermally conductive and electrically insulating coating (), and it has the same electrical potential as the housing (), but carries no current.

Cooling element

A switching arrangement having a large burn-up reserve, contact fingers (,) are connected to a first electrical terminal via flexible bands (,) consisting of strips of, for example, copper which lie one above the other. The connecting portion (,) of the band (,), the said connecting portion adjoining the contact fingers (,) and being rigidly connected to them, is reinforced in each case by pressure welding of the strips. In the switch-off state, the bands (,) and, in part, the contact fingers (,) bear on an outwardly pointing supporting face (,), whilst, in the switch-on state, at least the contact fingers (,) and connecting portions (,) are lifted off from the supporting face (,), with the bands (,) being bent at the same time, as a result of contact with the outside of a switching pin (,) displaceable along a switching axis (,). The pressure force caused by electromagnetic attraction between the relatively short contact fingers (,) and the connecting portions (,), which in each case form an angle of approximately 30&deg; with the switching axis (,), approximately compensates the contact lift-off forces, whilst the forces acting on the flexible parts of the bands (,) are absorbed essentially by the supporting face (,).

Burn-off contact arrangement

In order to reduce the commutation inductance of series-connected controllable semiconductor components (V1-V6), the latter are connected, in an essentially orthogonal manner and at a predeterminable distance (a), via spur double striplines (6, 6') to essentially planar main lines (5, 5'). All of the double striplines (5, 5'; 6, 6') have a layered structure and are mutually insulated by a thin insulating layer (7), with the result that a minimum current area is achieved. The controllable semiconductor components (V1-V6) are accommodated closely adjacent to freewheeling diodes in a module (10), the heat of which can be dissipated by cooling elements (8). Bipolar transistors having an insulated gate (IGBTs) are preferably used as controllable semiconductor components (V1-V6).

Current conductor arrangement

A method and a circuit arrangement having a device for measuring the depletion layer temperature of a GTO are specified. In this case, a measurement current (I.sub.M) is impressed in the gate circuit, and the voltage (U.sub.GR) between the cathode and gate is measured, with an applied measurement current (I.sub.M), after the transient turn-off processes have decayed. This voltage (U.sub.GR) is at this time dependent on the depletion layer temperature of the GTO. It thus becomes possible to measure the depletion layer temperature directly on the element, that is to say without circuitous routes via a heat sink temperature and calculation of the thermal resistance or the like, and during operation, continuously, and in consequence to monitor and control the stress level on the GTO precisely.

Method and circuit arrangement for measuring the depletion layer

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Zurich, Switzerland

Markus Keller