Infineon Technologies Ag

Osram Opto Semi-conductors Gmbh Co. Ohg

Markus Keim

Frank Fischer

Gottfried Landwehr

Thomas Litz

Hans-J&uuml;rgen Lugauer

Thierry Baron

Andreas Waag

G&uuml;nter Reuscher

Ulrich Zehnder

Matthias Keller

Hans-Peter Steinbr&uuml;ck

Mario Nagelstrasser

Gunter Reuscher

Hans-Jurgen Lugauer

A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.

Method of producing a II-VI semiconductor component containing selenium and/or sulrfur

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be&mdash;Se configuration.

II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction

A semiconductor laser component includes a semiconductor body with an SCH configuration which is suitable for generating an electromagnetic radiation and in which an active layer sequence with a quantum well structure is provided between a first outer cover layer of a first conductivity type and a second outer cover layer of the first conductivity type. A first denatured transition layer of a second conductivity type and a second denatured transition layer the first conductivity type are provided between the active layer sequence and the second outer cover layer.

Semiconductor laser component

An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.

Optoelectronic semiconductor component

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Ansbach, Germany

Markus Keim