Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Markus Horn

Roland Enzmann

Karsten Auen

Christoph Walter

Bernhard Stojetz

Markus Arzberger

Stephan Haneder

Markus Graul

Jan Seidenfaden

Thomas Schwarz

Thomas Dobbertin

Harald König

Jens Mueller

Mathias Kämpf

Thomas Veit

Andreas Breidenassel

Juergen Dachs

Tomasz Swietlik

Andreas Rozynski

Stefan Listl

Robin Fehse

A carrier for an optoelectronic component includes a main body, wherein the main body includes a first electrically conductive heating layer arrangement, a first solder layer for soldering an optoelectronic component to the main body is arranged on a first side of the main body, the first electrically conductive heating layer arrangement is electrically insulated from the first solder layer and thermally connected to the first solder layer, and the first heating layer arrangement has an exposed portion on which molten solder of the first solder layer can flow to reduce an electrical resistance of the first heating layer arrangement.

Carrier for an optoelectronic component, method of producing a carrier for an optoelectronic component, wafer and soldering method

An optoelectronic component includes a carrier with at least two radiation sources that generate electromagnetic radiation, including a housing consisting of a material non-transmissive to the electromagnetic radiation from the radiation sources, wherein at least two openings are provided in the housing, each opening is closed with a plate, the plate consists of a material transmissive to the electromagnetic radiation from the respective radiation source, and a radiation source is respectively assigned to an opening.

Optoelectronic component having a housing with a plurality of openings

A laser component includes an edge-emitting first laser chip with an upper side, a lower side, an end side and a side surface, wherein an emission region is arranged on the end side, the side surface is oriented perpendicularly to the upper side and to the end side, a first metallization is arranged on the upper side, a step by which a part adjacent to the upper side of the side surface is set back, is formed on the side surface, a passivation layer is arranged in the set-back part of the side surface, the laser chip is arranged on a carrier, the side surface faces toward a surface of the carrier, and a first solder contact arranged on the surface of the carrier electrically conductively connects to the first metallization.

Laser component and method of producing a laser component

An arrangement includes a conversion element, an optoelectronic semiconductor component and a first carrier including a carrier plane, wherein the conversion element is arranged on the carrier plane, the optoelectronic semiconductor component emits a first electromagnetic radiation including a first beam direction and a first wavelength from a first spectral range during operation, the first electromagnetic radiation is directed onto the conversion element, the conversion element at least partly converts the first electromagnetic radiation into a second electromagnetic radiation including a second wavelength from a second spectral range, the first beam direction of the optoelectronic semiconductor component is oriented at an inclination with respect to the carrier plane, a housing including a housing cap is provided, the housing cap is configured in a hollow-body-like fashion, the housing cap and the carrier define an interior, the conversion element and the semi-conductor component are arranged in the interior, and the housing cap includes a coupling-out window that couples out the second electromagnetic radiation.

Optoelectronic arrangement

A method of producing an optoelectronic component includes providing a carrier including a top side; creating at the top side of the carrier a region that is recessed with respect to a mounting region of the top side to form a step between the mounting region and the recessed region; arranging at the top side of the carrier a metallization extending over the mounting region and the recessed region; creating a separating track in the metallization, wherein the metallization is completely severed at least in sections in the mounting region and is at least not completely severed in the recessed region; and arranging an optoelectronic semiconductor chip above the mounting region of the top side, wherein the optoelectronic semiconductor chip is aligned at the separating track.

Method of producing an optoelectronic component

A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

Laser component and method of producing it

Method for producing semiconductor laser elements () comprises A) providing a carrier composite () having a plurality of carriers () for the semiconductor laser elements (), B) providing a laser bar () having a plurality of semiconductor laser diodes () which comprise a common growth substrate () and a semiconductor layer sequence () grown thereon, C) generating predetermined breaking points () on a substrate underside () of the growth substrate (), said substrate underside facing away from the semiconductor layer sequence (), D) attaching the laser bar () to a carrier upper side () of the carrier composite (), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (), wherein steps B) to E) are performed in the indicated sequence.

Method for producing semiconductor laser elements and semi-conductor laser element

A laser component includes a laser chip having a top side, an underside, a first side surface and a second side surface, which are oriented parallel to a resonator of the laser chip, wherein an underside of the laser chip is arranged in a manner bearing on a carrier, a top side of the laser chip is arranged in a manner bearing on a further carrier, the laser chip is hermetically tightly encapsulated between the carrier and the further carrier, a second electrical contact pad of the laser chip, said second electrical contact pad being formed on the top side of the laser chip, electrically conductively connects to a second electrical mating contact pad formed on the further carrier, and the first side surface of the laser chip thermally conductively connects to a heat sink.

Laser diode with cooling along even the side surfaces

Laser diode apparatus, comprising a carrier () having a carrier top (), a laser diode chip () arranged on the carrier top () emitting, during operation, electromagnetic radiation through a radiating face (), which radiating face () runs perpendicularly to the carrier top (), and at least one optical element () to deflect at least some of the electromagnetic radiation radiated by the laser diode chip () perpendicularly to the carrier top (). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate () between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.

Laser diode apparatus

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Growing community of inventors

Straubing, Germany

Markus Horn