Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Markus Goeppert

Helmut Haidner

Ulrich Wegmann

Martin Schriever

Albrecht Ehrmann

Joachim Stuehler

Rolf Freimann

Matthias Manger

Wolfgang Emer

Uwe Schellhorn

Rainer Hoch

Christoph Striebel

Gordon Doering

Uwe Shellhorn

Alfred Gatzweiler

An apparatus () determining an optical property of an imaging system () includes an illumination system () directing electromagnetic radiation () onto an object plane () of the imaging system, a utilization detector () determining the optical property, an output coupling device (), and an intensity sensor (). The detector captures the radiation after it has traveled along a utilized beam path () extending to the utilization detector. The output coupling device couples sensor radiation () out of the utilized beam path and into a sensor beam path () that differs from the utilized beam path. The intensity sensor records an angularly resolved intensity distribution present at least at one point in the object plane of the optical imaging system, which intensity distribution reproduces the intensity of the electromagnetic radiation in dependence on the angle of incidence with respect to the object plane.

Apparatus for determining an optical property of an optical imaging system

An objective for a projection exposure apparatus includes a metrology stage arranged on the frame of the objective. The objective includes at least one optical component, an objective mount for mounting the optical component, and a positioning device for holding at least one measuring device. The positioning device is connected to the objective mount and has at least one degree of freedom of displacement for displacing the measuring device.

Measuring system

A method for qualifying optics () of a projection exposure tool () for microlithography. The optics include () at least one mirror element (-to--to-) with a reflective coating () disposed on the latter. The method includes: irradiating electromagnetic radiation () of at least two different wavelengths onto the optics (), a penetration depth of the radiation into the coating () of the mirror element varying between the individual wavelengths, taking an optical measurement on the optics () for each of the wavelengths, and evaluating the measurement results for the different wavelengths taking into consideration a respective penetration depth of the radiation into the coating () of the mirror element for each of the different wavelengths.

Method and apparatus for qualifying optics of a projection exposure tool for microlithography

A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moir&#xe9; measuring technique.

Device and method for the optical measurement of an optical system by using an immersion fluid

A method and an apparatus for determining at least one optical property of an imaging optical system which is designed to image an object disposed in an object plane of the optical system into an assigned image plane. The method includes disposing at least one test structure in the object plane of the optical system, disposing an image recording device in at least two different positions relative to the image plane of the optical system, in each of the at least two relative positions the image recording device being offset in relation to the image plane to such an extent that an image of the pupil of the optical system is produced respectively on the image recording device by the optical system by means of the test structure, and recording an image produced on the image recording device by the optical system by means of the test structure in each of the at least two relative positions by means of the image recording device.

Method and apparatus for determining at least one optical property of an imaging optical system

Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure () to be arranged on the object side, and/or a grating structure () to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns. Additionally or alternatively, a pupil position offset caused by a lateral relative movement of the mask structure and detector element can be taken into account by back calculating the interferogram, respectively recorded by the detector element, using an associated phase-shift characteristic, or by a computational correction of wavefront derivatives, obtained from the recorded interferograms, in the direction of lateral movement. The method and/or the device can by used, for example, for determining aberration in the case of high-resolution projection objectives of microlithography exposure machines using shearing or point interferometry.

Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry

A device and a method for wavefront measurement of an optical system (), in particular by an interferometric measurement technique. A dynamic range correction element () is arranged in the beam path upstream of the detector arrangement () and is designed such that the variation in the spatially dependent characteristic of a phase of the wavefront forming the interference pattern is kept below a prescribed limit value throughout a detection area. In addition or as an alternative, a set of several diffraction structures of different period length can be used with a shearing interferometry technique and/or a set of several pairs of a reference pinhole and a signal passage opening with different hole spacings can be used with a point diffraction interferometry technique for different sub-areas of the detection area. A remaining distortion error can be taken into account by determining a corresponding distortion transformation and applying the inverse distortion transformation.

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Aalen, Germany

Markus Goeppert