Aixtron Se

Aixtron Ag

Markus Gersdorff

Gerhard Karl Strauch

Johannes Käppeler

Michael Long

Baskar Pagadala Gopi

Martin Dauelsberg

Marcel Kollberg

Walter Franken

Markus Jakob

Arno Offermanns

Markus Schwambera

Florenz Kittel

Nico Meyer

A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.

Coating device and coating method

A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Temperature-controlled gas supply line with dilution gas flows supplied at multiple locations

A device for carrying out a CVD process comprises a gas inlet element, which is arranged in a reactor housing and has a gas outlet plate, which faces a process chamber, comprises a porous material and has a multiplicity of gas outlet openings, which are fed with process gases from a gas distributing volume arranged in the gas inlet element. In order to improve production aspects of a gas inlet element, in particular for a CVD reactor with a large coating area, it is proposed that the porous material forms the core of the gas outlet plate, the surface segments of which that come into contact with the process gas are sealed.

Gas inlet element of a CVD reactor with weight-reduced gas outlet plate

The invention relates to a device for depositing laterally structured layers on a substrate () situated on a substrate support (), using a shadow mask () lying flat on the substrate surface (') to be coated, the substrate support () having first magnetic zones () for magnetically attracting second magnetic zones () of the shadow mask () that are associated with these first magnetic zones (), wherein, before coating the substrate () and when the shadow mask () is lying on the substrate (), the first magnetic zones () may be brought into an active position in which the second magnetic zones () are drawn toward the substrate surface (&#x2032;), and, for placement or removal of the shadow mask (), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones () is reduced. It is important that the first magnetic zones () are formed from magnetic elements, in particular permanent magnetic elements, situated in recesses () in a substrate support surface (&#x2032;) of the substrate support (), which are spatially associated with the second magnetic zones ().

Shadow mask held magnetically on a substrate support

The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber () along with a carrier gas by means of a gas inlet element () in order to deposit a thin layer, in particular in the form of a polymer, on the surface (') of a substrate () which lies on a supporting surface (&#x2032;) of a susceptor, said supporting surface (&#x2032;) lying opposite the gas inlet element (), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element () and/or the supporting surface (&#x2032;) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (&#x2032;) is lower than the temperature (TG) of the gas inlet element (). More particularly, at a first pressure (P1) prevailing in the deposition chamber () before the process gas penetrates into the deposition chamber (), the substrate () lying on the supporting surface (&#x2032;) is stabilized, by dissipating heat to the susceptor (), to a substrate temperature (TD) that only slightly exceeds the temperature (TS) of the supporting surface (&#x2032;) but is significantly lower than the temperature (TG) of the gas inlet element (), whereupon the pressure (P1) in the deposition chamber () is reduced to a process pressure (P2), and the process gas penetrates into the deposition chamber () when the process pressure (P2) has been reached.

Method for depositing a thin-film polymer in a low-pressure gas phase

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Herzogenrath, Germany

Markus Gersdorff