Nxp B.v.

Stmicroelectronics (crolles 2) Sas

Markus Gerhard Andreas Muller

Thomas Kormann

Alexandre Mondot

Philippe Coronel

Alexandre Mondo

A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800&#xb0; C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. Several devices are, thus, provided. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping

A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake at a temperature lower or equal to 800&#xb0; C., a subsequent deposition step will prevent deposition in the first surface region. This allows selective deposition in the second surface region, which is not doped with the Boron (or doped with another dopant or not doped). Several devices are, thus, provided. The method saves a usual photolithography sequence, which according to prior art is required for selective deposition of Si or SiGe in the second surface region.

A method of forming a localized SOI structure in a substrate () wherein a trench () is formed in the substrate, and a dielectric layer () is formed on the base of the trench (). The trench is filled with semiconductor material () by means of epitaxial growth.

Method of manufacturing localized semiconductor-on-insulator (SOI) structures in a bulk semiconductor wafer

A FinFET () comprises a fin-shaped layer-section () of a single-crystalline active semiconductor layer () extending on an insulating substrate layer () along a longitudinal fin direction between, a source layer-section (), and a drain layer-section () of the single-crystalline active semiconductor layer (). Furthermore, two separate gate-electrode layers () are provided, which do not form sections of the single-crystalline active semiconductor layer, each of the gate-electrode layers facing one of the opposite side faces of the fin-shaped layer-section (). Each gate-electrode layer is connected with a respective separate gate contact (). The gate-electrode layers, as seen in a cross-sectional view of a plane that is perpendicular to the longitudinal fin-direction, are arranged on the substrate layer () between the respective side face of the fin-shaped layer section and a respective contact-post layer section () of the single-crystalline semiconductor layer ().

FinFET with two independent gates and method for fabricating the same

The invention relates to a method for selective deposition of Si or SiGe on a Si or SiGe surface. The method exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800&#xb0; C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

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Grenoble, France

Markus Gerhard Andreas Muller