Asml Netherlands B.v.

Asml Holding N.v.

Markus Gerardus Martinus Maria Van Kraaij

Scott Anderson Middlebrooks

Maxim Pisarenco

Stefan Hunsche

Adrianus Cornelis Matheus Koopman

Maurits Van Der Schaar

Willem Marie Julia Marcel Coene

Arie Jeffrey Den Boef

Alexander Straaijer

Hendrik Jan Hidde Smilde

Niels Geypen

Arno Jan Bleeker

Simon Gijsbert Josephus Mathijssen

Antoine Gaston Marie Kiers

Henricus Petrus Maria Pellemans

Mircea Dusa

Richard Quintanilha

Youri Johannes Laurentius Maria Van Dommelen

Paul Frank Luehrmann

Remco Dirks

Hugo Augustinus Joseph Cramer

Nitesh Pandey

Patrick Warnaar

Anagnostis Tsiatmas

Gerbrand Van Der Zouw

Cédric Désiré Grouwstra

Zili Zhou

Nitish Kumar

Martijn Constant Van Beurden

Martinus Hubertus Maria Van Weert

Frank Arnoldus Johannes Maria Driessen

Willem Maria Julia Marcel Coene

Konstantin Tsigutkin

Paul Christiaan Hinnen

Sebastianus Adrianus Goorden

Armand Eugene Albert Koolen

Alok Verma

Irwan Dani Setija

Cedric Desire Grouwstra

Bastiaan Onne Fagginger Auer

Olger Victor Zwier

Sergey Tarabrin

Jeroen Cottaar

Shu-jin Wang

Hilko Dirk Bos

Nikhil Mehta

Frank Stefan Schneider

Patrick Philipp Helfenstein

A method and system for predicting complex electric field images with a parameterized model are described. A latent space representation of a complex electric field image is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The complex electric field image is predicted based on the latent space representation of the complex electric field image. The predicted complex electric field image includes an amplitude and a phase. The parameterized model comprises encoder-decoder architecture. In some embodiments, determining the latent space representation of the electric field image comprises minimizing a function constrained by a set of electric field images that could be predicted by the parameterized model based on the dimensional data in the latent space and the given input.

Method and system for predicting process information with a parameterized model

A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

Inspection apparatus and inspection method

A method for training a machine learning model configured to predict a substrate image corresponding to a printed pattern of a substrate as measured via a metrology tool. The method involves obtaining a training data set including (i) metrology data of the metrology tool used to measure the printed pattern of the substrate, and (ii) a representation of a mask pattern employed for imaging the printed pattern on the substrate; and training, based on the training data set, a machine learning model to predict the substrate image of the substrate as measured by the metrology tool such that a cost function is improved, wherein the cost function includes a relationship between the predicted substrate image and the metrology data.

Method and apparatus for predicting substrate image

A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

Metrology targets

A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

Method and apparatus for image analysis

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Method and apparatus for angular-resolved spectroscopic lithography characterization

Parameters of a structure () are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face () of at least one sub-structure is approximated by a series of steps (') along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts () are introduced, without introducing corresponding steps.

Methods and apparatus for simulating interaction of radiation with structures, metrology methods and apparatus, device manufacturing method

A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, has the steps:numerically solving a volume integral equation comprising a nominal linear systemto determine a nominal vector field being independent with respect to the structural perturbation;using a perturbed linear systemto determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; andcalculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.

Methods and apparatus for calculating electromagnetic scattering properties of a structure

A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.

Yield estimation and control

A method including: obtaining a logistic mathematical model predicting the formation of a physical structure created using a patterning process; evaluating the logistic mathematical model to predict formation of a part of the physical structure and generate an output; and adapting, based on the output, an aspect of the patterning process.

Disclosed is a method for reconstructing a parameter of a lithographic process. The method comprises the step of designing a preconditioner suitable for an input system comprising the difference of a first matrix and a second matrix, the first matrix being arranged to have a multi-level structure of at least three levels whereby at least two of said levels comprise a Toeplitz structure. One such preconditioner is a block-diagonal matrix comprising a BTTB structure generated from a matrix-valued inverse generating function. A second such preconditioner is determined from an approximate decomposition of said first matrix into one or more Kronecker products.

Methods and apparatus for calculating electromagnetic scattering properties of a structure and for reconstruction of approximate structures

Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method

An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

Method and apparatus for measuring a parameter of interest using image plane detection techniques

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Eindhoven, Netherlands

Markus Gerardus Martinus Maria Van Kraaij