Globalfoundries Inc.

Markus Forseberg

Manfred Horstmann

Christoph Schwan

Martin Gerhardt

By recessing the isolation structure of a transistor prior to silicidation, the series resistance may be reduced due to the increased amount of metal silicide formed in the vicinity of the isolation structure. By recessing the isolation structure prior to the formation of the gate electrode, an increased degree of poly wrap around may be obtained, thereby increasing the effective channel width.

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Dresden, Germany

Markus Forseberg