Siemens Aktiengesellschaft

Markus-Christian Amann

Wolfgang Thulke

Bernhard Stegmueller

Jochen Heinen

Stefan Illek

Gerhard Baumann

Gerhard Winzer

Hans F Mahlein

Franz Kappeler

Ulrich Wolff

An optoelectric component has two waveguide layers and a layer with a periodic structure, which layers are arranged parallel to one another and are dimensioned so that a codirectional coupling is produced between modes guided in each of the waveguide layers. In order to prevent undesirable reflections, changes in the effective refractive index in the periodic structure is gradually changed along the direction of propagation. This change can be by the boundary of the periodic structure extending at an angle other than a right angle to the direction of propagation, either in a vertical or a lateral direction. The change can also be accomplished by a gradual change of the composition at the boundary of the periodic structure and adjacent portions or sections.

Optoelectronic component having codirectional mode coupling

Tunable laser diode having an integrated Mach-Zehnder interferometer is provided. A first and a second waveguide are arranged vertically relative to one another with respect to the layer plane as stripe-shaped layers. The second waveguide extends over the entire resonator length between mirror end faces, whereas the first waveguide is only present in one or more interconnected sections provided as coupling region. The waveguides are arranged in such close proximity to one another in this coupling region that coupling occurs between modes guided in the waveguides. An active layer and a tuning layer are arranged vertically relative to one another in these waveguides. A separate current injection into this tuning layer and into this active layer are present, and an interconnected section of the waveguide not present over the entire resonator length is a respective, natural multiple of the coupling length of two specific modes in the waveguides to be coupled.

Tunable laser diode

Tunable laser diode, whereby two waveguide lasers (5, 7) are arranged transversely relative to one another. A separate current injection into each of the two waveguide layers (5, 7) is possible due to an intermediate layer (6) situated between these waveguide layers (5, 7). An absorber layer (4) periodically interrupted in a longitudinal direction is arranged transversely relative to the layer plane, resulting in forward coupling with an imaginary degree of coupling.

A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.

Tunable semiconductor laser on a semi-insulating substrate

A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.

Tunable semiconductor laser

In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. By applying a protective cover layer that will dissolve in super-cooled melts of the material of the lateral layers, before the growth of the lateral layers, the growth of the lateral layers, particularly blocking pn-junctions, above the active stripe is avoided since the cover layer dissolves in the melt given epitaxial application of the lateral layers.

Method and manufacturing a laser diode with buried active layer

A semiconductor laser arrangement is composed of two quasi-index guided laser diodes each with a light intensifying layer arranged in a plane shared by both diodes. The characteristics of the laser diodes are such that one polarization state predominates in one diode, while the other polarization state predominates in the other diode. Any desired degree of polarization dependency of the gain is set by the ratio of the operating currents of the two diodes, so that isotropic amplification can be achieved.

Semiconductor laser arrangement and method for the operation thereof

An array of coupled waveguides in the form of MCRW laser diodes and/or passive waveguides are coupled to one another by optical waves of the TM-mode occurring in semiconductor regions between the waveguides that have a reduced thickness d, the neighboring waveguides being provided at a spacing a.

Array of coupled optical waveguides

An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed.

Coupled laser diode arrangement

A laser diode has regions laterally flanking a strip-shaped laser junction. In these regions a pn-junction inhibiting the laser current is generated by a re-doping which has been created by dopant diffusion from a given layer through an adjoining, further layer into another layer spaced from the given layer by the further layer.

Laser diode with buried active layer and lateral current limitation by

A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.

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Munich, Germany

Markus-Christian Amann