Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Facebook Technologies, LLC

Meta Platforms Technologies, LLC

Markus Broell

Stephan Lutgen

Wolfgang Schmid

Martin Rudolf Behringer

Thomas Lauermann

Michael Huber

Michael Grundmann

Xue Wang

Berthold Hahn

Johannes Baur

William Padraic Henry

Petrus Sundgren

Franz Eberhard

Christoph Klemp

David Massoubre

Albrecht Kieslich

Robert Walter

Christian Schmid

Daniel Bryce Thompson

Christian Rumbolz

Anurag Tyagi

Bernd Boehm

David Hwang

Andreas Rudolph

Georg Rossbach

Alexander Tonkikh

Stefan Barthel

Sebastian Hoibl

Benjamin Michaelis

Richard Floeter

Guillaume Lheureux

Jana Sommerfeld

Martin Herz

Brian Matthew Mcskimming

François Gérard Franck Olivier

Vasily Zabelin

Julia Grosser

A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Lateral micro-LED

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer

Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*10cm, and the p-contact layer is less than 100 nm thick.

Optoelectronic semiconductor chip based on a phosphide compound semiconductor material

The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body () having a radiation-permeable surface (), and introducing structures () into the semiconductor body () on the radiation-permeable surface (), wherein the structures () are quasi-regular.

Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface

A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

High-efficiency red micro-LED with localized current aperture

Techniques disclosed herein relate to micro light emitting diodes (micro-LEDs) for a display system. A display system includes an array of micro light emitting diodes (micro-LEDs), an array of output couplers optically coupled to the array of micro-LEDs and configured to extract light emitted by respective micro-LEDs in the array of micro-LEDs, a waveguide display, and display optics configured to couple the light emitted by the array of micro-LEDs and extracted by the array of output couplers into the waveguide display. Each output coupler in the array of output couplers is configured to direct a chief ray of the light emitted by a respective micro-LED in the array of micro-LEDs to a different respective direction.

Micro-LED design for chief ray walk-off compensation

An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Optoelectronic semiconductor chip with two separate light emitting layers

A semiconductor chip () is described comprising a semiconductor layer sequence () based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence () contains a p-type semiconductor region () and an n-type semiconductor region (). The n-type semiconductor region () comprises a superlattice structure () for improving current spreading, wherein the superlattice structure () has a periodic array of semiconductor layers (). A period of the superlattice structure () has at least one undoped first semiconductor layer () and a doped second semiconductor layer (), wherein an electronic band gap Eof the doped second semiconductor layer () is larger than an electronic band gap Eof the undoped first semiconductor layer ().

Semiconductor chip

An optoelectronic semiconductor chip () is provided which has a semiconductor body comprising a semiconductor layer sequence () with an active region () provided for generating and/or receiving radiation, a first semiconductor region () of a first conduction type, a second semiconductor region () of a second conduction type and a cover layer (). The active region () is arranged between the first semiconductor region () and the second semiconductor region () and comprises a contact layer () on the side remote from the active region. The cover layer () is arranged on the side of the first semiconductor region () remote from the active region () and comprises at least one cut-out (), in which the contact layer () adjoins the first connection layer (). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.

Method for producing an optoelectronic semiconductor chip

The invention relates to an optoelectronic component (), comprising a substrate (), on which a semiconductor layer sequence () has been placed, wherein the semiconductor layer sequence () has at least one identifier () for identifying the component (). The invention also relates to a method for producing an optoelectronic component ().

Optoelectronic component including a substrate on which a semiconductor layer sequence with an identifier for identifying the component is applied

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Cork, Ireland

Markus Broell