Siltronic Ag

Markus Blietz

Reinhold Wahlich

Alfred Miller

Dirk Zemke

Andreas Huber

Robert Hoelzl

Dieter Graef

Dieter Gräf

An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G&#x3c;(v/G)=1.3&#xd7;10cm/(K&#xb7;min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

SOI wafer and method for producing it

Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semiconductor wafer has a warp of less than 30 &#x3bc;m, a DeltaWarp of less than 30 &#x3bc;m, a bow of less than 10 &#x3bc;m and a DeltaBow of less than 10 &#x3bc;m. Processes for the production of a semiconductor wafer of this type require specific heat treatment regimens.

Layered semiconductor wafer with low warp and bow, and process for producing it

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Tittmoning, Germany

Markus Blietz