Asm International N.v.

Marko Vehkamaki

Mikko Ritala

Raija H Matero

Antti H Rahtu

Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.

Process for producing oxide films

Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapor phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.

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Helsinki, Finland

Marko Vehkamaki