Siltectra Gmbh

Infineon Technologies Ag

Marko Swoboda

Jan Richter

Christian Beyer

Ralf Rieske

Franz Schilling

Albrecht Ullrich

Hans-Joachim Schulze

Francisco Javier Santos Rodriguez

Wolfram Drescher

Roland Rupp

Werner Schustereder

Bernhard Goller

Wolfgang Lehnert

Alexander Breymesser

Gerald Lackner

Tobias Franz Wolfgang Hoechbauer

Alexander Binter

Mihai Draghici

Guenter Schagerl

Wolfgang Diewald

Heimo Graf

Christoph Guenther

Christoph GÜNTHER

A method of splitting off a semiconductor wafer from a semiconductor bottle includes: forming a separation region within the semiconductor boule, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor boule; and applying an external force to the semiconductor boule such that at least one crack propagates along the separation region and a wafer splits from the semiconductor boule.

Method for splitting semiconductor wafers

A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.

Solid body and multi-component arrangement

The present invention therefore relates to a method for separating at least one solid body layer () from a donor substrate (). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate (), wherein the donor substrate () has crystal lattice planes () which are inclined in relation to a planar main surface (), wherein the main surface () delimits the donor substrate () in the longitudinal direction of the donor substrate () on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate () via the main surface () for changing the material properties of the donor substrate () in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate () forms a linear shape (), wherein the changes in the material property are generated on at least one generating plane (), wherein the crystal lattice planes () of the donor substrate () are oriented in an inclined manner in relation to the generating plane (), wherein the linear design () is inclined in relation to a sectional line () which is produced at the interface between the generating plane () and the crystal lattice plane (), wherein, owing to the changed material property, the donor substrate () tears in the form of subcritical cracks, separating the solid body layer () by introducing an external force into the donor substrate () for connecting the subcritical crack or so much material on the generating plane () being changed by means of the laser radiation that the solid body layer () becomes detached from the donor substrate () with connection of the subcritical crack.

Method for producing wafers with modification lines of defined orientation

The present invention relates to a method, according to claim, for separating at least one solid body layer (), particularly a solid body disk, from a donor substrate (). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (); producing or arranging a stress-producing layer () on a particularly flat surface () of the donor substrate () which axially defines the donor substrate (); pressing at least one pressure application element () of a pressure application device () onto at least one pre-determined portion of the stress-producing layer (), in order to press the stress-producing layer () onto the surface (); separating the solid body layer () from the donor substrate () by thermally applying the stress-producing layer (), thereby producing mechanical stress in the donor substrate (), the mechanical stress creating a crack for separating a solid body layer (), and the pressure application element () being pressed onto the stress-producing layer () during the thermal application of the stress-producing layer ().

Device and method for applying pressure to stress-producing layers for improved guidance of a separation crack

A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

Method and apparatus for producing at least one modification in a solid body

A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

Method for forming a crack in an edge region of a donor substrate

A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

Method for separating wafers from donor substrates

The invention relates to a method for separating at least one solid-state layer () from at least one solid (). The method according to the invention includes the steps of: producing a plurality of modifications () by means of laser beams in the interior of the solid () in order to form a separation plane (); producing a composite structure by arranging or producing layers and/or components () on or above an initially exposed surface () of the solid (), the exposed surface () being part of the solid-state layer () to be separated; introducing an external force into the solid () in order to create stresses in the solid (), the external force being so great that the stresses cause a crack to propagate along the separation plane (), wherein the modifications for forming the separation plane () are produced before the composite structure is produced.

Method for reducing the thickness of solid-state layers provided with components

The present invention relates to a method for generating control data for the secondary machining of a solid body (), in particular wafer, which is modified by means of laser beams (). The interior of said solid body () has multiple modifications (), said modifications () having been produced by means of laser beams (). The method comprises the following steps: defining a criterion of analysis for analyzing the modifications () produced in the interior of the solid body (); defining a threshold value with respect to the criterion of analysis, an analytical value on one side of the threshold value triggering a secondary machining registration; analyzing the wafer by means of an analytical unit (), said analytical unit () analyzing the modifications () with respect to the criterion of analysis and outputting analytical values regarding the analyzed modifications, said analytical values lying above or below the threshold value; outputting location data with respect to the analyzed modifications, said location data containing information regarding in which region(s) of the solid body () the analytical value lie above or below the threshold value; and generating control data for controlling a laser treatment device () for the secondary machining of the solid body (), said control data comprising at least the location data of the modifications () registered for secondary machining.

Laser conditioning of solid bodies using prior knowledge from previous machining steps

The invention relates to a production facility () for detaching wafers () from donor substrates (). According to the invention, the production facility comprises at least one analysis device () for determining at least one individual property, particularly the doping, of the respective donor substrate (), a data device () for producing donor substrate process data for individual donor substrates (), wherein the donor substrate process data comprise analysis data of the analysis device (), and the analysis data describe at least the individual property of the donor substrate (), a laser device () for producing modifications () inside the donor substrate () in order to form a region of detachment () inside the respective donor substrate (), wherein the laser device () can be operated according to the donor substrate process data of a concrete donor substrate () for the machining of the concrete donor substrate (), and a detachment device () for producing mechanical voltages inside the respective donor substrate () for triggering and/or guiding a crack for separating respectively at least one wafer () from a donor substrate ().

Production facility for separating wafers from donor substrates

A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.

Method for separating solid body layers from composite structures made of SiC and a metallic coating or electrical components

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

According to claim, the invention relates to a method for providing at least one solid-body layer (). The solid-body layer () is separated from a solid body (). The method according to the invention preferably has the steps of: producing a plurality of modifications () in the interior of the solid body () using laser beams in order to form a separation plane (), compressive stresses being produced in the solid body () by the modifications (); separating the solid-body layer () by separating the remaining solid body () and the solid-body layer () along the separation plane () formed by the modifications (), wherein at least parts of the modifications () which produce the compressive stresses remain on the solid-body layer (), and enough modifications () are produced that the solid-body layer () is separated from the solid body () on the basis of the modifications () or an external force is introduced into the solid body () in order to produce additional stresses in the solid body (), said external force being so great that the stresses cause a crack to propagate along the separation plane () produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer () from the solid body () in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer () produced by the compressive stresses of the remaining modification parts or at feast partly, preferably greatly or completely, compensate for the compressive stresses.

Method for thinning solid-body layers provided with components

Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

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Dresden, Germany

Marko Swoboda