Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Sony Deutschland Gmbh

Marko Burghard

Akio Yasuda

Tobias Vossmeyer

Klaus Kern

Isabelle Besnard

Ulrich Schlecht

Kannan Balasubramanian

Jingbiao Cui

Dinh Loc Duong

Robert Urcuyo

The application relates to a chemical sensor device comprising a substrate (), a sensor medium () formed on the substrate, the sensor medium comprising one-dimensional nanoparticles, wherein the one-dimensional nanoparticles essentially consist of a semiconducting ABcompound, e.g. VOand detection means () for detecting a change of a physical property of the sensor medium e.g. conductivity. The porosity of the sensor medium supports a fast access of the analyte to the sensing material and therefore a fast response of the sensor. The selectivity and sensitivity of the sensor can be tailored by doping the one-dimensional nanoscale material with different dopants or by varying the dopant concentration. Sensitivity of the sensor device to an analyte, preferably an amine, can be increased by increasing relative humidity of the sample to at least 5%.

Chemical sensor

The invention relates to a method of fabricating a structure with field-effect transistors each comprising a source electrode, a drain electrode, a channel extending between the source and drain electrodes and at least one gate electrode associated with the channel for controlling the conductance of the channel, wherein the channel comprises one or more semiconducting single-wall carbon nanotubes. The method includes the steps of

Method of fabricating carbon nanotube field-effect transistors through controlled electrochemical modification

A field effect transistor memory cell has a source region, a drain region, a channel region and a gate region, with the channel region extending from the source region to the drain region and being formed from at least one nanowire which has at least one defect such that charges can be trapped in the defects and released from the defects by a voltage applied to the gate region. A memory device built up from such memory cells and a method of manufacturing such memory cells is also disclosed.

Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell

Growing community of inventors

Magstadt, Germany

Marko Burghard