International Business Machines Corporation

Mark William Kellogg

Timothy Jay Dell

Bruce G Hazelzet

Kevin Charles Gower

Warren Edward Maule

Erik L Hedberg

Claude Louis Bertin

Kevin W Kark

Daniel Mark Dreps

Frank David Ferraiolo

Wayne Frederick Ellis

Brian John Connolly

Christopher M Herring

David J Perlman

Steven Alfred Grundon

Roger A Rippens

Robert Brett Tremaine

Thomas Basil Smith, Iii

George C Feng

Michael P Clinton

William R Tonti

Wilbur David Pricer

Clarence Rosser Ogilvie

Wayne John Howell

James Marc Leas

Jerzy Maria Zalesinski

Marc Raymond Faucher

Paul C Stabler

Daniel P Fuoco

Jorge E Lenta

Daniel J Phipps

Paul William Coteus

Christopher P Miller

Ralph M Begun

Duane E Galbi

Robert Dominick Mirabella

Frank D Ferriaolo

Wally Tuten

James R Mallabar

Johann Werner Nagel

David T Perlman

James Lewis Rogers

Lina S Farah

Darcie J Rankin

David J Perhnan

A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/ Parity register. By providing the module with a fault tolerant address and command bus fault-tolerance and self-healing aspects necessary for autonomic computing systems compatible with industry-standards is realized. The memory module corrects single bit errors on the command or address bus and permits continuous memory operation independent of the existence of these errors and can determine any double bit error condition. The redundant contacts on the module prevents what would otherwise be single points of failure.

High reliability memory module with a fault tolerant address and command bus

A memory subsystem with positional read data latency that includes one or more memory modules, a memory controller and one or more memory busses is provided. The memory controller includes instructions for providing positional read data latency. The memory modules and the memory controller are interconnected via the memory busses.

Memory subsystem with positional read data latency

A packetized cascade memory system including a plurality of memory assemblies, a memory bus including multiple segments, a bus repeater module and a segment level sparing module. The bus repeater module is in communication with two or more of the memory assemblies via the memory bus. The segment level sparing module provides segment level sparing for the communication bus upon segment failure.

System, method and storage medium for providing a serialized memory interface with a bus repeater

A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32 K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/Parity register. By providing the module with a fault tolerant address and command bus fault-tolerance and self-healing aspects necessary for autonomic computing systems compatible with industry-standards is realized. The memory module corrects single bit errors on the command or address bus and permits continuous memory operation independent of the existence of these errors and can determine any double bit error condition. The redundant contacts on the module prevents what would otherwise be single points of failure.

A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.

276-pin buffered memory module with enhanced fault tolerance

A memory system having a plurality of DRAMs which are selectively provided non-inverted or inverted signals. The DRAMs have the ability to accept non-inverted or inverted address/command signals from a register that drives a plurality of signals simultaneously. The system includes DRAM receivers with programmable input polarity and a register with programmable output polarity.

Memory device with programmable receivers to improve performance

A multi-mode memory buffer device for use in various memory subsystem structures. The buffer device includes a packetized multi-transfer interface which is redriven to permit connection between a first memory assembly and cascaded memory assemblies. The buffer device also includes a memory interface adapted to connect to either a second memory assembly or directly to memory devices.

System, method and storage medium for a multi-mode memory buffer device

A memory subsystem that includes segment level sparing. The memory subsystem includes a cascaded interconnect system with segment level sparing. The cascaded interconnect system includes two or more memory assemblies and a memory bus. The memory bus includes multiple segments and the memory assemblies are interconnected via the memory bus.

System, method and storage medium for providing segment level sparing

A memory subsystem with positional read data latency that includes a cascaded interconnect system with one or more memory modules, a memory controller and one or more memory busses. The memory controller includes instructions for providing positional read data latency. The memory modules and the memory controller are interconnected by a packetized multi-transfer interface via the memory busses.

System, method and storage medium for a memory subsystem with positional read data latency

A method for performing a common cancel (CC) function on a dynamic random access memory (DRAM) semiconductor device to improve reliability and speed of a memory system. The CC function rakes advantage of the intrinsic delays associated wit memory read operations at high clock frequencies, and the increased write latency commensurate with increased read latencies where non-zero larencies for read and write operations are the norm by permitting address and command ECC structures to operate in parallel with the address and command re-drive circuitt The CC function is extendable to future DDRand DDRoperating requirements in which latency of higher frequency modes will increase due to the shift from 2 bit pre-fetch to 4 and 8 bit pre-fetch architecture.

Method for performing a command cancel function in a DRAM

A cascaded interconnect system including a memory controller, one or more memory modules, an upstream memory bus and a downstream memory bus. The one or more memory modules include a first memory module with cache data. The memory modules and the memory controller are interconnected by a packetized multi-transfer interface via the downstream memory bus and the upstream memory bus. The first memory module and the memory controller are in direct communication via the upstream memory bus and the downstream memory bus.

System, method and storage medium for providing data caching and data compression in a memory subsystem

A plurality of semiconductor devices are provided on a carrier for testing or burning-in. The carrier is then cut up to provide single chip-on-carrier components or multi-chip-on-carrier components. The carrier is used as a first level package for each chip. Thus, the carrier serves a dual purpose for test and burn-in and for packaging. A lead reduction mechanism, such as a built-in self-test engine, can be provided on each chip or on the carrier and is connected to contacts of the carrier for the testing and burn-in steps. The final package after cutting includes at least one known good die and may include an array of chips on the carrier, such as a SIMM or a DIMM. The final package can also be a stack of chips each mounted on a separate carrier. The carriers of the stack are connected to each other through a substrate mounted along a side face of the stack that is electrically connected to a line of pads along an edge of each carrier.

Carrier for test, burn-in, and first level packaging

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Henrietta, NY, United States of America

Mark William Kellogg