Seagate Technology Incorporated

Mark William Covington

Dimitar Velikov Dimitrov

Qing I He

Michael Allen Seigler

Wonjoon Jung

Dian Song

Mark Thomas Kief

Wei Tian

Thomas William Clinton

Thomas McLendon Crawford

Hua Zhou

Thomas Roy Boonstra

Petrus Antonius Van Der Heijden

Michael Kevin Minor

Dion Song

Michael L Mallary

Victor Sapozhnikov

Werner Scholz

Jason Bryce Gadbois

Amit Vasant Itagi

Bin Lu

Robert Earl Rottmayer

Sharat Batra

Yonghua Chen

Nils Jan Gokemeijer

Gregory John Parker

Christophe Daniel Mihalcea

Sunita B Gangopadhyay

Yunhao Xu

Michael C Kautzky

James Gary Wessel

Eric Walter Singleton

Ganping Ju

Thomas Francis Ambrose

Anthony M Mack

Scott Wilson Stokes

Andrew Robert Eckert

Isabel Goncalves Trindade

Vladyslav Alexandrovich Vas'ko

Vijay Karthik Sankar

Levent Colak

Jiexuan He

Shehzaad Kaka

Dimitar Velikov Demitrov

Taras Pohkil

Rene' Johannes Marinus Van De Veerdonk

A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Magnetic sensor manufacturing

A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.

Data reader with tuned microstructure

A magnetic element may be configured with at least a magnetic stack having first and second magnetically free layers that each has a predetermined stripe height from an air bearing surface (ABS). The first and second magnetically free layers can respectively be configured with first and second uniaxial anisotropies that are crossed in relation to the ABS and angled in response to the predetermined stripe height.

Magnetic element with crossed anisotropies

A data storage device may be constructed as a data reader in various embodiments with a magnetic stack that has a barrier layer disposed between first and second magnetically free layers. The magnetic stack may have a horizontally symmetrical configuration that provides negative exchange coupling between the magnetically free layers.

Tuned horizontally symmetric magnetic stack

An apparatus and associated method may be used to provide a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers and means for generating a high magnetic moment region proximal to an air bearing surface (ABS) and a low magnetic moment region proximal to a hard magnet.

Magnetic element with dual magnetic moments

An apparatus includes a waveguide having a core layer and an end adjacent to an air bearing surface, first and second poles magnetically coupled to each other and positioned on opposite sides of the waveguide, wherein the first pole includes a first portion spaced from the waveguide and a second portion extending from the first portion toward the air bearing surface, with the second portion being structured such that an end of the second portion is closer to the core layer of the waveguide than the first portion, and a heat sink positioned adjacent to the second portion of the first pole.

Recording head for heat assisted magnetic recording

In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

Tunneling magneto-resistive sensors with buffer layers

A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.

Low resistance area magnetic stack

Various embodiments may be generally directed to a magnetic sensor constructed with a decoupling layer that has a predetermined first morphology. A magnetic free layer can be deposited contactingly adjacent to the decoupling layer with the magnetic free layer configured to have at least a first sub-layer having a predetermined second morphology.

Varyinig morphology in magnetic sensor sub-layers

An apparatus can be generally directed to a magnetic stack having a magnetically free layer positioned on an air bearing surface (ABS). The magnetically free layer can be biased to a predetermined magnetization in various embodiments by a biasing structure that is coupled with the magnetically free layer and positioned distal the ABS.

Magnetic element with biasing structure distal the air bearing surface

A data storage device may be generally directed to a data transducing head capable of magnetoresistive data reading. Such a data transducing head may be configured with at least a trilayer reader that contacts and is biased by a coupling feature. The coupling feature may have a smaller extent from an air bearing surface (ABS) than the trilayer reader.

Coupling feature in a magnetoresistive trilayer lamination

A magnetic element may generally be directed to data bit sensing in various data storage environments. An example magnetic element may be configured with at least a magnetic stack contacting a magnetic shield having a current constriction feature configured to transition current from a horizontal orientation to a vertical orientation proximal an air bearing surface (ABS).

Magnetic element with current constriction feature

Growing community of inventors

Edina, MN, United States of America

Mark William Covington