Eastman-kodak Company

National Semiconductor Corporation

Other

Mark Willam Poulter

Peter J Hopper

Yuri Mirgorodski

Philipp Lindorfer

Pavel Poplevine

Roozbeh Parsa

Ann Gabrys

Trevor Niblock

A probe card includes a mechanical support fixture having an inner aperture with a plurality of probes secured to the fixture that includes probe tips that extend into the inner aperture for contacting probe pads on die of a wafer to be probed. At least one magnetic shield includes a magnetic material that at least substantially surrounds a projected volume over an area that encloses the probe tips. The magnetic material has a relative magnetic permeability of at least 800.

Magnetic shielded probe card

An electromechanical memory cell utilizes a cantilever and a laterally positioned electrode. The cantilever is spaced apart from the electrode by a distance that is greater than the elastic limit of the cantilever. The memory cell is programmed by applying voltages to the cantilever and the electrode which causes the cantilever to move into a region of plastic deformation without ever touching the electrode.

Multi-state electromechanical memory cell

An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.

Active pixel sensor cell with integrating varactor and method for using such cell

A split-gate flash memory array is programmed, in part, by applying a programming voltage to the row of cells that include the to-be-programmed cells, and an inhibiting voltage to the row of cells that share the same source line as the row that includes the to-be-programmed cells. The inhibiting voltage is greater than zero and less than the programming voltage.

Growing community of inventors

Orinda, CA, United States of America

Mark Willam Poulter