International Business Machines Corporation

Asahi Kasei Kabushiki Kaisha

Other

Globalfoundries Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Mark Whitney Hart

Robert Dennis Miller

Sally Ann Swanson

Ho-Cheol Kim

Hiroshi Ito

Richard Anthony Dipietro

Joseph Grover Gordon, Ii

Robert David Allen

Ratnam Sooriyakumaran

Frances Anne Houle

John Campbell Scott

Gregory Michael Wallraff

Charles Thomas Rettner

Dennis R McKean

Gary Miles McClelland

Geraud Jean-Michel Dubois

Winfried W Wilcke

Bryan D McCloskey

Naga Phani B Aetukuri

Leslie E Krupp

Christie R K Marrian

Shintaro Kitajima

Hemantha Kumar Wickramasinghe

Joy Cheng

Andrew M Homola

Barton Allen Smith

Anthony Cyril Lowe

Lawrence B Schein

Chung H Lam

Craig Jon Hawker

Dieter Klaus Weller

Gregory Breyta

Bruce David Terris

Koichi R Wago

Douglas Johnson Werner

Kenneth Raymond Carter

Simone Raoux

Alfred Floyd Renaldo

Andrew John Kellock

Liesl Folks

Bulent Nihat Kurdi

John Edward Eric Baglin

Hermantha K Wickramasinghe

Joseph Grover Gordon Ii

Joseph G Gordon, Ll

A method includes dispensing ion-conducting particles on a substrate comprising an adhesive to which the ion-conducting particles adhere; overcoating the ion conducting particles with a polymer; removing the substrate and the adhesive from the ion conducting particles; and removing a polymer overburden on the ion conducting particles to form a device that includes: (i) the polymer or a derivative thereof, and (ii) ion-conducting particles. At least a portion of the ion-conducting particles extend through the polymer or its derivative.

Ion conducting hybrid membranes

A device includes a membrane that is: (i) impermeable to oxygen, and (ii) insoluble in at least one polar solvent; and ion conducting particles in the membrane. At least some of the particles extend from a first side of the membrane to an opposed second side of the membrane. The thickness of the membrane is 15 &#x3bc;m to 100 &#x3bc;m.

Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.

Planarization over topography with molecular glass materials

A molding composition and a method of forming a pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.

Aromatic vinyl ether based reverse-tone step and flash imprint lithography

A method of forming low dielectric contrast structures by imprinting a silsesquioxane based polymerizable composition. The imprinting composition including: one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, wherein each of the one or more polymerizable group is bound to a different silicon atom of the one or more polyhedral silsesquioxane oligomers; and one or more polymerizable diluents, the diluents constituting at least 50% by weight of the composition.

Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials

A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

Methods for forming surface features using self-assembling masks

A molding composition and a method of forming an pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.

A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.

Processes and materials for step and flash imprint lithography

A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.

Forming surface features using self-assembling masks

An imprint process comprising coating a selected surface of a micropatterned template with a release composition having a basic reactive moiety; wherein the template is transparent to UV radiation; imprinting the template onto a photocationically curable composition; curing the UV curable composition to form an imprinted composition, wherein the release composition having a basic reactive moiety is effective to locally inhibit curing of the composition at an interface between the template and the imprinted composition; and releasing the template from the imprinted composition.

Release layer for imprinted photocationic curable resins

A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.

Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation

A biomolecular array includes a substrate across which is distributed an array of discrete regions of a porous substance formed from a porogen-containing organosilicate material. The porous substance is designed to bind chemical targets useful in biotechnology applications, such as gene expression, protein, antibody, and antigen experiments. The regions are preferably optically isolated from each other and may be shaped to enhance detection of optical radiation emanating from the porous substance, e.g., as a result of irradiation of the regions with ultraviolet light. The discrete regions may be configured as microscopic wells within the substrate, or they may reside on top of the substrate in the form of microscopic mesas.

Discrete nano-textured structures in biomolecular arrays, and method of use

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San Jose, CA, United States of America

Mark Whitney Hart