Altera Corporation

Mark W Fiester

John C Costello

Stephanie T Tran

Guu Lin

Myron Wai Wong

Krishna Rangasayee

Robert R N Bielby

Yen-Fu Lin

Chuan-Yung Hung

W Bradley Vest

An integrated circuit with a flexible data strobe signal (DQS) bus structure is presented. The integrated circuit has a number of input/output (I/O) modules with a number of data pins to receive and transmit data. In addition, a subset of the I/O modules also have a data strobe pin. The input/output modules are connected to data strobe signal buses having a fixed configuration. The configuration of the fixed DQS bus groups a number of data pins with a corresponding data strobe pin and the grouping of data pin spans multiple I/O modules. The integrated circuit also has a flexible data bus connected to the I/O modules. Data pins of I/O modules of a second integrated circuit are mapped a subset of the data pins of corresponding I/O modules of the integrated circuit. The flexible data strobe signal bus enables selection of the subset of data pins in the integrated circuit.

Flexible data strobe signal bus structure for wirebond and flip-chip packaging

An integrated circuit contains circuitry to operate in such a fashion to reduce output noise when switching output circuits from a programming mode to a user mode. In an implementation, the integrated circuit (,) is configurable in the programming mode with user configuration data. In the user mode, the integrated circuit will operate with the functionality as defined by the user during the programming mode. When switching from the programming mode to the user mode, each output (,) of the integrated circuit will switch to its user mode value. In order to minimize switching noise, the outputs are released to their user mode values not all at the same time.

Reducing I/O noise when leaving programming mode

Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such that the voltage across their gate oxide is reduced. The charge pump of the present invention further provides circuitry to reduce leakage current.

High voltage pump circuit with reduced oxide stress

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Redwood City, CA, United States of America

Mark W Fiester