Seagate Technology Incorporated

Mark Thomas Kief

Venkateswara R Inturi

Dimitar Velikov Dimitrov

Wonjoon Jung

Kaizhong Gao

Michael C Kautzky

Mark William Covington

Ibro Tabakovic

Dian Song

Marcus Winston Ormston

Song Sheng Xue

Ming Sun

Sameh Hassan

Vladyslav Alexandrovich Vas'ko

Yifan Zhang

James Gary Wessel

Nurul Amin

Patrick Joseph Ryan

Jie Gong

Qing I He

Eric Shane Linville

Ladislav Rudolf Pust

Thomas Roy Boonstra

Steve C Riemer

Janusz Josef Nowak

Adam Andrzej Lapicki

Shaoping Li

Huaqing Yin

Olle Gunnar Heinonen

Werner Scholz

Sarbeswar Sahoo

Yonghua Chen

Sharat Batra

Konstantin Nikolaev

Kevin Anthony McNeill

Steven Carl Riemer

Yuming Zhou

Amit Sharma

Steven Kalderon

YuQing Du

Zhihong Lu

Declan Macken

Eric Walter Singleton

Wei Tian

Mourad Benakli

Mark Anthony Gubbins

Victor Sapozhnikov

Jianhua Xue

Kirill A Rivkin

Alexander Mikhailovich Shukh

Mark Ostrowski

Jiaoming Qiu

Thomas William Clinton

Brian William Karr

Harry Sam Edelman

Javier Ignacio Guzman

Richard P Michel

Richard P Larson

Christina L Hutchinson

Hui Brickner

David Chris Seets

Johannes Van Ek

Hieu Lam

Anthony M Mack

James F Dolejsi

Lijuan Zou

Martin Louis Plumer

Dion Song

Vee Sochivy Kong

Chunhong Hou

Dehua Han

Wei Peng

Meng Zhu

Alexandru Cazacu

Charles Everett Hawkinson

Levent Colak

Khuong T Tran

Khoung T Tran

David Christopher Seets

Sung-Hoon Gee

Nural Amin

Vladyslav A Vas&prime;ko

Kenneth A Medlin

Eliot Lewis Cuthbert Estrine

Ibro Takakovic

Inturi Venkateswara Rao

John A Hawkins

A non-local spin valve (NLSV) sensor includes a bearing surface and a detector located proximate to the bearing surface. The NLSV sensor also includes a channel layer located behind the detector relative to the bearing surface, and in a substantially same plane as the detector. The channel layer has a front end that is proximate to the detector and a rear end that is distal to the detector. The NLSV sensor further includes first and second spin injectors, with the first spin injector located proximate to the rear end of the channel layer and positioned above the channel layer, and the second spin injector located proximate the rear end of the channel layer and positioned below the channel layer.

Non-local spin valve sensor for high linear density

A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Magnetic sensor manufacturing

A data reader may consist of at least a magnetoresistive stack positioned on an air bearing surface. A portion of the magnetoresistive stack may be set to a first fixed magnetization by a pinning structure separated from the air bearing surface by a front shield that is set to a second fixed magnetization by a biasing structure. The front shield may be separated from the biasing structure by a coupling structure.

Data reader with front shield coupling structure

A read sensor that includes a free layer having a magnetization that changes according to an external magnetic field. The read sensor also includes an additional magnetic layer and a non-magnetic layer. The non-magnetic layer may include a corrugated surface facing the additional magnetic layer. The corrugated surface is configured to enhance uniaxial anisotropy in the read sensor.

Magnetoresistive sensor with enhanced uniaxial anisotropy

A data reader may have a magnetoresistive stack consisting of at least magnetically free and magnetically fixed structures with the magnetically fixed structure set to a first magnetization direction by a pinning structure separated from an air bearing surface by a front shield portion of a magnetic shield. The pinning structure can meet the front shield portion with a planar sidewall angled at 10&#xb0; or less with respect to the ABS.

Method of manufacturing a recessed data reader pinning structure with vertical sidewall

A data reader may have a magnetoresistive stack consisting of at least magnetically free and magnetically fixed structures. The magnetically fixed structure can be set to a first magnetization direction by a first pinning structure separated from an air bearing surface by a front shield portion of a magnetic shield. The front shield portion may be set to a different second magnetization direction by a second pinning structure.

Data reader with pinned front shield

In accordance with one embodiment, a multi-reader can be manufactured so as to be able to read from multiple regions of a storage device contemporaneously during operation. Such a device can be configured, for example, by forming a first wall; forming a second wall; and utilizing the first wall and the second wall to form two adjacent reader stacks.

Multiple reader stacks disposed in close proximity

A read head includes a bottom shield configured as a bottom electrical contact. A bottom reader stack is disposed on and electrically coupled to the bottom shield. A middle electrical contact is electrically coupled to a top layer of the bottom reader stack. A top reader stack is disposed on the bottom reader stack. A bottom layer of the top reader stack electrically coupled to the middle electrical contact. A top shield is configured as a top electrical contact. The top shield is disposed on and electrically coupled to the top reader stack.

Read head with multiple reader stacks

A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.

Data reader with tuned microstructure

A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.

Positive and negative magnetostriction ultrahigh linear density sensor

Growing community of inventors

Lakeville, MN, United States of America

Mark Thomas Kief