International Business Machines Corporation

Globalfoundries Inc.

Mark T Winkler

David Brian Mitzi

Jeehwan Kim

Teodor Krassimirov Todorov

Byungha Shin

Oki Gunawan

Richard Alan Haight

Tayfun Gokmen

Keith E Fogel

Wei Wang

Marinus Hopstaken

A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu&#x2014;Zn&#x2014;Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

Atomic layer deposition for photovoltaic devices

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Hybrid CZTSSe photovoltaic device

A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VIand I-II-IV-VIsemiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.

Low reflection electrode for photovoltaic devices

A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu&#x2014;Zn&#x2014;Sn containing chalcogenide compound with a kesterite structure of the formula: CuZnSn(SSe)wherein 0&#x2266;x&#x2266;1; 0&#x2266;y&#x2266;1; 0&#x2266;z&#x2266;1; &#x2212;1&#x2266;q&#x2266;1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.

Titanium incorporation into absorber layer for solar cell

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New York, NY, United States of America

Mark T Winkler