Qualcomm Incorporated

Mark Stephen Veatch

Ryan David Lane

Justin Joseph Rosen Gagne

Edward Reyes

Tom Gregorich

A high-speed semiconductor device includes a substrate having an upper substrate surface, a lower substrate surface, and a periphery bounding the upper and the lower substrate surfaces, the substrate further having an upper substrate ground trace providing an electrical path to the lower substrate surface through a substrate ground via; an array of solder balls attached to the lower substrate surface, the array of solder balls including a plurality of ground solder balls disposed at the periphery and electrically connected to the substrate ground via.

Optimized power delivery to high speed, high pin-count devices

An area array package comprising a die attach area for attaching a die to a substrate, a network of staggered bond fingers, and a network of bond islands for coupling bond wires between the bond islands and die bond pads is provided. A network of package leads, for example, a network of solder balls in a ball grid array, is depopulated to permit greater trace route flexibility and via placement within the substrate. Stacked die and multi-chip packages are also disclosed. A method for accommodating a high pin-count die in an area array package is also included.

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San Diego, CA, United States of America

Mark Stephen Veatch