E2v Technologies (uk) Limited

Mark Stanford Robbins

Raymond Thomas Bell

Kevin Anthony Derek Hadfield

Kevin Anthony Hadfield

A method and device having a CCD in which charge multiplication is obtained by applying drive voltages to clocking elements and is arranged to derive the gain provided by the multiplication elements from at least first and second output signals. The CCD is operated at a first voltage or temperature setting, and then a second voltage or temperature setting and the output signals derived with the CCD imaging a substantially constant scene. The gain at a given voltage or temperature setting can then be derived as a function of the different operational voltage of temperature setting. The method and device can also derive the gain as a function of the rate of change of output signal with an operational parameter such as voltage or temperature.

Determining the multiplication of EMCCD sensor

A system for time resolved spectroscopy comprises a CCD device arranged to receive a time varying spectrum. Time resolved spectroscopy is the analysis of a spectrum that varies with time due to any cause. The variation with time of the spectrum may be due, for example, to (i) changes of the spectrum from a given sample space with time (such as due to emission decay); and (ii) changes in the spectrum as successive portions of a sample space are sampled (such as laser scanning microscopy). The CCD device comprises an array of photosites arranged to detect the time varying spectrum and to produce signal charge representative of the spectrum, and one or more CCD multiplication registers arranged to receive the signal charge and to provide charge multiplication. An enhancement of speed and sensitivity is given by a storage area which receives the signal charge in parallel from the array of photosites to provide the charge in serial to the one or more multiplication registers.

System and method for time resolved spectroscopy

A sensor device of the type for sensing incident radiation by charge generation, has a substrate within which charge may be generated by incident radiation. A plurality of electrodes are arranged to cover an image area of the substrate and are selectively connectable to supplied DC voltages such that an electric field is created across the image area to sweep charge across multiple electrodes from the image area to an output. The voltage applied to one of the electrodes may be a voltage of a level so as to present a barrier to charge within the image area. The sensor thus has a variable sample area defined by the barrier voltage level.

Variable aperture sensor

A CCD Device of the type for providing charge gain by impact ionisation has a multiplication register. Gain provided by a subset of the elements of the multiplication register are independently controllable from other elements in the register. This enables the register to be used in one setting with the same gain applied to all elements and a different setting with a subset of elements arranged to provide a different gain. By comparing the two signals, the gain provided by each element and the register as a whole may be derived.

Gain measurement structure

A CCD device includes multiplication elements arranged so as to multiply charge by clocking with a high voltage. An additional region beneath the high voltage electrode is so doped in relation to at least the preceding electrode as to have a higher depleted charge density than under the preceding electrode. This assists in preventing high energy electrodes from encountering the silicon surface of the semiconductor.

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Brentwood, United Kingdom

Mark Stanford Robbins