Sandisk Il Ltd.

Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Sandisk Corporation

Mark Shlick

Mark Murin

Menahem Lasser

Eran Sharon

Idan Alrod

Nian Niles Yang

Evgeny Mekhanik

Refael Ben-Rubi

Joanna Lai

Jiahui Yuan

Niles Yang

Abu Naser Zainuddin

Yoav Markus

Uri Peltz

Yehuda Hahn

Deepanshu Dutta

Ramanathan Muthiah

Yu-Chung Lien

Dudy David Avraham

Abhijeet Manohar

Daniel Joseph Linnen

Daniel Edward Tuers

Amir Shaharabany

Hadas Oshinsky

Omer Fainzilber

Hua-Ling Cynthia Hsu

Ravi J Kumar

Opher Lieber

Ashish Ghai

Srikar Peesari

Itshak Afriat

Shemmer Choresh

Ekamdeep Singh

Cuong Quoc Trinh

Moshe Cohen

Uri Shir

Amir Hadar

Kalpana Vakati

Yuvaraj Krishnamoorthy

Ahiad Turgeman

Maythin Uthayopas

To reduce spikes in the current used during read operations by a system of multiple NAND memory dies operated in parallel, relative delays between the memory dies are introduced before high current sub-operations of the read. The occurrence of the primary current peak in the read operation can depend upon the extent to which a selected memory block is programmed. For example, in a closed block the primary peak occurs when ramping up unselected word lines, while for an open block the primary read peak occurs when the bit lines are charged up. To account for these differences, determining where to introduce relative delays is based on the extent to which a block is programmed. For example, if a block fully or largely closed, delays are introduced before ramping up the unselected word lines, but otherwise adding the delays before charging up bit lines.

Separate peak current checkpoints for closed and open block read ICC countermeasures in NAND memory

An apparatus is provided that includes a plurality of non-volatile memory cells, a charge pump circuit configured to receive a clock signal and provide a plurality of voltages to the non-volatile memory cells, and a control circuit coupled to the non-volatile memory cells and the charge pump circuit. The control circuit is configured to reduce a current consumed by the apparatus by selectively reducing a clock rate of the clock signal depending on a memory operation being performed on the non-volatile memory cells.

Apparatus and method for selectively reducing charge pump speed during erase operations

Methods for recording commands in memory and providing the recorded commands. In one embodiment, a data storage controller includes a memory interface configured to interface with a memory, a controller memory including a storage firmware and a record mapping table, and a processor. The processor, when executing the storage firmware, is configured to receive a record identifier, receive a command including data to be stored in the memory, and create an entry in the record mapping table associating the record identifier with a logical block address of the command. The command is received after the record identifier. The processor may receive a playback identifier that includes the record identifier and determine, using the record mapping table, a location of the associated command in the memory. The command is provided to an external device.

Record and playback commands for storage devices

A memory controller that includes, in one implementation, a memory interface and a controller circuit. The memory interface is configured to interface with a non-volatile memory. The controller circuit is configured to receive a skewed codeword read from the non-volatile memory. The controller circuit is also configured to scan the skewed codeword by inserting or removing a quantity of bits at different locations in the skewed codeword and determining resulting syndrome weights of the skewed codeword. The controller circuit is further configured to determine an adjusted codeword by inserting or removing the quantity of bits at one of the different locations in the skewed codeword which results in a smallest syndrome weight. The controller circuit is also configured to decode the adjusted codeword.

Data storage device with syndrome weight minimization for data alignment

A data storage device including, in one implementation, a non-volatile memory device and a controller coupled to the non-volatile memory device. The non-volatile memory device includes a memory block. The controller is configured to receive a cycle operation request and perform a wear-level mitigation operation in response to receiving the cycle operation request. To perform the wear-level mitigation operation, the controller is configured to determine a read state condition of the memory block, perform the requested cycle operation, and increment a cycle count of the memory block by a value based on the determined read state condition of the memory block. The first read state of the memory block and the second read state of the memory block are based on a wordline voltage that is associated with the memory block.

Intelligent memory wear leveling

A data storage device is configured to mark data for refresh in response to determining that a first measured temperature associated with writing the data to the memory exceeds a first threshold. The data storage device is further configured to refresh the marked data in response to determining that a second measured temperature associated with the memory is below a second threshold.

Temperature variation compensation

Time division peak power management in non-volatile memory systems is disclosed. The memory system has a memory controller and a number of semiconductor dies. Each die is assigned a time slot in which to perform high current portions of memory operations. The memory controller provides an external clock to each die. Each die tracks repeating time slots based on the external clock. The memory controller may synchronize this tracking. If a die is about to perform a high current portion of a memory operation, the die checks to determine if its allocated slot has been reached. If not, the die halts the memory operation until its allocated time slot is reached. When the allocated time slot is reached, the halted memory operation is resumed at the high current portion. Therefore, the high current portion of the memory operation occurs during the allocated time slot.

Time division peak power management for non-volatile storage

Apparatuses, systems, methods, and computer program products are disclosed for distributed program operation. One apparatus includes a memory module comprising non-volatile memory. Here, the memory module is configured to program a page of non-volatile memory with a first number of program cycles and indicate (e.g., to a host) that the page is partially programmed. The memory module is also configured to program the page with a second number of program cycles after a predetermined time, wherein the memory module performs one or more other storage operations during the predetermined time, and indicate (e.g., to the host) that the page is fully programmed.

Partial program operation of memory wordline

Apparatus, systems, methods, and computer program products for providing dynamically assignable data latches are disclosed. A non-volatile memory die includes a non-volatile memory medium. A plurality of sets of data latches of a non-volatile memory die are configured to facilitate transmission of data to and from a non-volatile memory medium, and each of the sets of data latches are associated with a different identifier. An on-die controller is in communication with a sets of data latches. An on-die controller is configured to receive a first command for a first memory operation comprising a selected identifier. An on-die controller is configured to execute a first memory operation on a non-volatile memory medium using a set of data latches of a plurality of sets of data latches, and the set of data latches is associated with a selected identifier.

Dynamically assigning data latches

A device or apparatus may be configured to perform memory operations on a memory die while a current multi-level cell programming operation is being performed. In the event that a controller identifies pending memory operations to be performed in the memory die, the controller may communicate with the memory die to determine a status of auxiliary latches of the memory die. Depending on the status, the controller may determine if the memory die is in a suspend/resume period and/or which pending memory operations to have performed.

Event-driven schemes for determining suspend/resume periods

A data storage device includes a controller and a memory. The memory is coupled to the controller. The memory includes storage elements coupled to bit lines. The controller is configured to access bit line integrity data corresponding to a region of the memory, the bit line integrity data indicating a number of bit lines. The controller is also configured to store data related to a memory operation threshold based on the number of bit lines.

Memory operation threshold adjustment based on bit line integrity data

To prevent data loss due to latent defects, a non-volatile memory system will use a leakage detection circuit to test for small amounts of leakage that indicate that the memory is susceptible to failure.

Non-volatile memory with in field failure prediction using leakage detection

A data storage device includes a memory including a plurality of storage elements configured to store data. The plurality of storage elements includes a first group of storage elements and a second group of storage elements. The data storage device further includes a selection module configured to retrieve first bit line defect information affecting the first group of storage elements and to retrieve second bit line defect information affecting the second group of storage elements.

Decoding data using bit line defect information

Growing community of inventors

Ganey-Tikva, Israel

Mark Shlick